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US 2003/0205459 A1Published application
Fabrication method for spin valve sensor with insulating and conducting seed layers
AssigneeInternational Business Machines Corporation
InventorsTsann Lin, Daniele Mauri
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Abstract
A method is described comprising forming an insulating polycrystalline seed layer in a first chamber by reactively pulsed DC magnetron sputtering, then forming an insulating amorphous-like seed layer in a second chamber by reactively pulsed DC magnetron sputtering, then forming a conducting seed layer and a ferromagnetic free layer in a third chamber by ion beam sputtering, and then forming the remainder of a spin valve sensor through the antiferromagnetic layer in a fourth chamber by DC magnetron sputtering.
Claims1
A spin valve sensor, comprising:
- a) an Al2O3 layer;
- b) a Ni—Cr—Fe/Ni—Fe/Co—Fe multilayer structure over said Al2O3 layer;
- c) a Cu spacer layer over said multilayer structure;
- d) a Co—Fe/Ru/Co—Fe pinned layer over said Cu spacer layer;
- and
- e) a Pt—Mn antiferromagnetic layer over said pinned layer.
3 more elements
Dependencies are inferred from the claim text.