Plasma cvd device
AssigneeKokusai Electric Corporation
InventorsKATSUNORI FUNAKI, SHIN HIYAMA
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Abstract
It is an object of the present invention to provide a plasma CVD device in which it is possible to inhibit the formation of particles resulting from the adhesion of reaction by-products of poor adhesive strength around the upper electrode. The plasma CVD device has a vacuum container 200, an upper electrode 210 and a lower electrode 220. The edge of the gas dispersion plate 213 of the upper electrode 210 is formed in the shape of an upturned bowl, the edge of which extends below the upper surface of the treatment substrate W mounted on the substrate-mounting surface 221 of the lower electrode 220.
Claims11
A plasma CVD device which impresses electric power between an upper electrode and a lower electrode arranged horizontally so as to face each other, thus producing plasma from reaction gases for use in film deposition, said reaction gases being excited by this plasma to form a prescribed thin film on the surface of a treatment substrate located on the upper surface of said lower electrode, wherein:
- the edge of said upper electrode extends below the upper surface of said treatment substrate located on the upper surface of said lower electrode.
Dependencies are inferred from the claim text.