Plasma treatment apparatus and method of producing semiconductor device using the apparatus
AssigneeHitachi, Ltd.
InventorsNaoshi Itabashi, Naoyuki Kofuji, Yasunori Goto
Life of this patent
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Abstract
A plasma treatment apparatus which introduces electromagnetic waves from a dielectric window into a chamber evacuated to low pressure has a standing wave controlling part provided near the periphery part of the dielectric window with the portions other than the entrance thereof being surrounded by conductor, and having shape and size thereof equivalent to depth d=l/4+l/2×(n−1)±l/8: (n=positive integer, l=c(light velocity)/f/{square root}{square root over (ε)}) in terms of the characteristic length.
Claims20
A plasma treatment apparatus comprising in a chamber feasible to be evacuated to low pressure a wafer stage for an object for processing to be disposed thereon, a dielectric window, that faces said object for processing, for introducing electromagnetic waves, a high-frequency power source with frequency=f to generate electromagnetic wave for making a predetermined gas to be introduced into inside said chamber evacuated to low pressure into plasma, and a part of controlling standing wave provided in the vicinity of the periphery part of said dielectric window, filled with vacuum, air, or a dielectric with dielectric constant ε, and with the portions other than the entrance thereof being surrounded by conductor, having depth thereof falling within the range of the characteristic length of d=l/4+l/2×(n−1)±l/8:
- (n=positive integer, f=c(light velocity)/f/{square root}{square root over (ε)}).
A plasma treatment apparatus comprising a chamber feasible to be evacuated to low pressure, a wafer stage for an object for processing located inside said chamber to be disposed thereon, an antenna as well as a dielectric window provided at a location facing said object for processing, a high-frequency power source with frequency=f to generate electromagnetic wave for making a predetermined gas to be introduced into said chamber into plasma, and a part of controlling standing wave for making the standing wave electric field distribution provided in the vicinity of the periphery part of said dielectric window proper.
A method of producing a semiconductor device using a plasma treatment apparatus comprising a chamber feasible to be evacuated to low pressure, a wafer stage for a wafer located inside said chamber to be mounted thereon, an antenna as well as a dielectric window provided in a location facing said wafer, a high-frequency power source with frequency=f to generate electromagnetic wave for making a predetermined gas to be introduced into said chamber into plasma, and a part of controlling standing wave for making the standing wave electric field distribution provided in the vicinity of the periphery part of said dielectric window proper, comprising:
- a step of forming a first film on a main surface of the wafer;
- a step of forming a mask making a predetermined pattern shape on said first film;
- and
- a step of mounting the wafer in which said mask is formed onto the wafer stage of said plasma treatment apparatus and causing a part of said first film in which said mask is not formed to undergo etching processing.
A method of producing a semiconductor device using a plasma treatment apparatus comprising of a chamber feasible to be evacuated to low pressure, a wafer stage for a wafer located inside said chamber to be mounted thereon, an antenna as well as a dielectric window provided in a location facing said wafer, a high-frequency power source with a predetermined frequency to generate electromagnetic wave for making a predetermined gas to be introduced into said chamber into plasma, and a part of controlling standing wave for making the standing wave electric field distribution provided in the vicinity of the periphery part of said dielectric window proper, comprising:
- a step of forming a first film on a main surface of the wafer;
- a step of forming a second film on said first film, a step of forming a third film on said second film;
- a step of forming a mask making a predetermined pattern shape on said third film;
- and
- a step of mounting the wafer in which said mask is formed onto the wafer stage of said plasma treatment apparatus, causing a part of said third film in which said mask is not formed to undergo etching processing, and copying the pattern of said mask onto the third, the second and the first films.
Dependencies are inferred from the claim text.