Method for forming a MIM (metal-insulator-metal) capacitor
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsNg Chit Hwei, Shao Kai, Bao Guang Wen, Tjoa Tjin Tjin, Sanford Chu
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Abstract
Methods for forming a metal-insulator-metal (MIM) capacitor using an organic anti-reflective coating (ARC) are described. The first electrode of the MIM capacitor is formed from a first metal layer. The organic ARC is applied, and the second electrode of the MIM capacitor is formed from a second metal layer. The organic ARC is then removed using a nominal clean technique. Because the organic ARC is removed, the performance of the MIM capacitor is improved. Specifically, the breakdown voltage of the MIM capacitor increases and the leakage current decreases.
Claims21
A method of fabricating a metal-insulator-metal (MIM) capacitor, said method comprising the steps of:
- a) forming a first electrode of said MIM capacitor from a first metal layer in a structure;
- b) applying an anti-reflective coating (ARC) to a surface of said structure prior to forming a second electrode of said MIM capacitor, wherein said ARC is an organic ARC and wherein said second electrode is formed from a second metal layer separated from said first electrode by a dielectric layer;
- c) forming said second electrode;
- and
- d) removing organic ARC remaining after said step of forming said second electrode is performed.
A method of fabricating a metal-insulator-metal (MIM) capacitor, said method comprising the steps of:
- a) receiving a laminate comprising a first metal layer separated from a second metal layer by a dielectric layer;
- b) removing a portion of said first metal layer and a portion of said dielectric layer to form a first electrode of said MIM capacitor and a surface of said laminate exposed by said step of removing;
- c) applying an anti-reflective coating to said first electrode and to said surface exposed in said step b), wherein said ARC is an organic ARC;
- d) removing a portion of said second metal layer to form a second electrode of said MIM capacitor;
- and
- e) removing organic ARC remaining after said step d) is performed.
A method of fabricating a metal-insulator-metal (MIM) capacitor, said method comprising the steps of:
- a) depositing a first metal layer on a substrate;
- b) removing a portion of said first metal layer to form a first electrode of said MIM capacitor;
- c) depositing a dielectric layer on said first electrode and a second metal layer on said dielectric layer to form a laminate;
- d) applying an anti-reflective coating (ARC) to said laminate, wherein said ARC is an organic ARC;
- e) removing a portion of said dielectric layer and said second metal layer to form a second electrode of said MIM;
- and
- f) removing organic ARC remaining after said step e) is performed.
Dependencies are inferred from the claim text.