Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Indutrial Co., Ltd.
InventorsHiroko Kubo, Kenji Yoneda
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Abstract
A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.
Claims11
A semiconductor device comprising a gate electrode, the gate electrode having been formed over a semiconductor substrate with a gate insulating film interposed between the gate electrode and the substrate,
- wherein the gate electrode includes:
- a silicon germanium layer;
- and a silicon layer that has been formed on the silicon germanium layer.
A semiconductor device comprising a gate electrode, the gate electrode having been formed over a semiconductor substrate with a gate insulating film interposed between the gate electrode and the semiconductor substrate,
- wherein the gate electrode includes a silicon germanium layer that has been deposited in an amorphous state.
Dependencies are inferred from the claim text.