Photosensitive polymers, resist compositions comprising the same, and methods for forming photoresistive patterns
AssigneeSamsung Electronics Co., Ltd.
InventorsSangjun Choi, Hyunwo Kim, Joontae Moon, Sanggyun Woo
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Abstract
A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer includes a comonomer having an acid-labile substituent group or a polar functional group, and a copolymer of alkyl vinyl ether and maleic anhydride. The copolymer is represented by the following structure: 1 where k is an integer of 3 to 8, and where X is tertiary cyclic alcohol having 7 to 20 carbon atoms.
Claims37
A photosensitive polymer comprising a copolymer of alkyl vinyl ether and maleic anhydride, said copolymer represented by the following structure:
- 23
- wherein k is an integer of 3 to 8, and wherein X is tertiary cyclic alcohol having 7 to 20 carbon atoms.
A photosensitive polymer comprising;
- (a) a copolymer of alkyl vinyl ether and maleic anhydride, said copolymer represented by the following structure:
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- wherein k is an integer of 3 to 8, and wherein X is tertiary cyclic alcohol having 7 to 20 carbon atoms;
- and
- (b) a comonomer having an acid-labile substituent or a polar functional group.
A photosensitive polymer comprising;
- (a) a copolymer of alkyl vinyl ether and maleic anhydride, said copolymer represented by the following structure:
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- wherein k is an integer of 3 to 8, and wherein X is tertiary cyclic alcohol having 7 to 20 carbon atoms;
- and
- (b) at least two comonomers each comprising (meth)acrylic acid and (meth)acrylate or norbornene derivatives having an acid-labile substituent or a polar functional group.
A resist composition comprising;
- (a) a photoacid generator(PAG);
- and
- (b) a photosensitive polymer comprising (1) a comonomer having an acid-labile substituent group or a polar functional group, and (2) a copolymer of alkyl vinyl ether and maleic anhydride, said copolymer represented by the following structure:
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- wherein k is an integer of 3 to 8, and wherein X is tertiary cyclic alcohol having 7 to 20 carbon atoms.
A method of forming a photoresist pattern, said method comprising:
- applying a resist composition on a substrate, the resist composition having (a) a photoacid generator(PAG) and (b) a photosensitive polymer comprising (1) a comonomer having an acid-labile substituent group or a polar functional group, and (2) a copolymer of alkyl vinyl ether and maleic anhydride, the copolymer represented by the following structure:
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- wherein k is an integer of 3 to 8, and wherein X is tertiary cyclic alcohol having 7 to 20 carbon atoms;
- exposing said resist composition to patterned radiation to introduce a patterned image into said resist composition, wherein the radiation is selected from the group consisting of ultraviolet radiation, x-ray radiation, and electron beam radiation;
- baking the substrate on which said resist composition is applied and introduced with the patterned image;
- and
- developing the baked substrate.
Dependencies are inferred from the claim text.