Thin-film deposition method
AssigneeIshikawajima-Harima Heavy Industies Co., Ltd.
InventorsMasashi Ueda, Tomoko Takagi
Life of this patent
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Abstract
In a thin-film deposition method, a substrate is placed in a heat chamber having a pressure equal to or higher than an atmospheric pressure, and the substrate is heated in the heat chamber by supplying gas having a temperature higher than a room temperature by forced convection. The heated substrate is transferred from the heat chamber into a deposition chamber which is a vacuum chamber connected to the heat chamber directly or indirectly with a valve interposed therebetween. Then, a thin-film deposition is carried out on the substrate in the deposition chamber at a deposition temperature higher than the room temperature.
Claims13
A thin-film deposition method, comprising:
- placing a substrate in a heat chamber having a pressure equal to or higher than an atmospheric pressure;
- heating the substrate in the heat chamber by supplying gas having a temperature higher than a room temperature by forced convection;
- transferring the heated substrate from the heat chamber into a deposition chamber which is a vacuum chamber connected to the heat chamber directly or indirectly with a valve interposed therebetween;
- and
- carrying out a thin-film deposition on the substrate in the deposition chamber at a deposition temperature higher than the room temperature.
A thin-film deposition method, comprising:
- placing a substrate in a heat chamber having a pressure equal to or higher than an atmospheric pressure;
- heating the substrate in the heat chamber by supplying gas having a temperature higher than a room temperature by forced convection;
- transferring the heated substrate from the heat chamber into a load-lock chamber which is a vacuum chamber connected to the heat chamber directly or indirectly with a first valve interposed therebetween;
- transferring the heated substrate from the load-lock chamber into a deposition chamber which is a vacuum chamber connected to the load-lock chamber directly or indirectly with a second valve interposed therebetween, and carrying out a thin-film deposition on the substrate in the deposition chamber at a deposition temperature higher than the room temperature.
Dependencies are inferred from the claim text.