Power switching transistor and method of manufacture for a fluid ejection device
AssigneeHewlett-Packard Development Company, L.P.
InventorsStanley J. Wang, George H. Corrigan, Tim R. Koch
Life of this patent
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Abstract
A method of manufacturing a power switching transistor for a fluid ejection device includes forming a first conductivity type region and a first diffused region within the first conductivity type region. The first diffused region has a first conductivity type and has a greater impurity concentration than the first conductivity type region. A gate is formed and is defined to have a thin oxide region and a thick oxide region. The thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region and the thin oxide region is at a defined distance from the first diffused region.
Claims26
A method of manufacturing a power switching transistor for a fluid ejection device, the method comprising:
- forming a first conductivity type region;
- forming a first diffused region within the first conductivity type region, wherein the first diffused region has a first conductivity type and has a greater impurity concentration than the first conductivity type region;
- and
- forming a gate defined to have a thin oxide region and a thick oxide region, wherein the thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region, and wherein the thin oxide region is at a defined distance from the first diffused region.
An inkjet printhead die comprising:
- a group of nozzles;
- a group of firing resistors corresponding to the group of nozzles;
- and
- a group of power switching transistors, wherein each power switching transistor is coupled to a corresponding firing resistor and is configured to switch electrical current through the corresponding firing resistor to fire a corresponding nozzle, each power switching transistor including:
- a source;
- a drain formed within a first conductivity type region wherein the drain has a first conductivity type and a greater impurity concentration than the first conductivity type region;
- and
- a gate defined to have a thin oxide region and a thick oxide region, wherein the thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region, and wherein the thin oxide region is at a defined distance from the drain.
A power field effect transistor for switching electrical current through a corresponding firing resistor to fire a corresponding nozzle in a fluid ejection device, the power field effect transistor comprising:
- a source;
- a drain formed within a first conductivity type region wherein the drain has a first conductivity type and a greater impurity concentration than the first conductivity type region;
- and
- a gate defined to have a thin oxide region and a thick oxide region, wherein the thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region, and wherein the thin oxide region is at a defined distance from the drain.
Dependencies are inferred from the claim text.