Memory device having dual power ports and memory system including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Yoon Sim, Dong-Il Seo
Life of this patent
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Abstract
A plurality of internal circuits of a memory device are operable at first and second internal voltages, where the first internal voltage is less than the second internal voltage. A first power port of the memory device receives a first power supply voltage, and a second power port of the memory device receives a second power supply voltage, where the first power supply voltage is less than the second power supply voltage. An internal voltage generation circuit of the memory device is selectively operable in either a first mode in which the second internal voltage is generated from the first power supply voltage, or a second mode in which the second internal voltage is generated from the second power supply voltage.
Claims23
A memory device, comprising:
- a plurality of internal circuits which are operable at first and second internal voltages, wherein the first internal voltage is less than the second internal voltage;
- a first power port for receiving a first power supply voltage;
- a second power port for receiving a second power supply voltage, wherein the first power supply voltage is less than the second power supply voltage;
- and
- an internal voltage generation circuit which is selectively operable in either a first mode in which the second internal voltage is generated from the first power supply voltage, or a second mode in which the second internal voltage is generated from the second power supply voltage.
A memory system comprising:
- a voltage regulator which generates a first power supply voltage from a second power supply voltage, wherein the second power supply voltage is greater than the first power supply voltage;
- a memory device comprising (a) a plurality of internal circuits which are operable at first and second internal voltages, wherein the first internal voltage is less than the second internal voltage, (b) a first power port for receiving the first power supply voltage, (c) a second power port for receiving the second power supply voltage, and (d) an internal voltage generation circuit which is selectively operable in either a first mode in which the second internal voltage is generated from the first power supply voltage, or a second mode in which the second internal voltage is generated from the second power supply voltage;
- and
- a control circuit which controls an operation of the memory device.
A memory system comprising:
- a first voltage regulator which generates a first power supply voltage from a second power supply voltage, wherein the second power supply voltage is greater than the first power supply voltage;
- a second voltage regulator which generates a third power supply voltage from the second power supply voltage, wherein the third power supply voltage is less than the second power supply voltage and greater than the first power supply voltage;
- a memory device comprising (a) a plurality of internal circuits which are operable at first and second internal voltages, wherein the first internal voltage is less than the second internal voltage, (b) a first power port for receiving the first power supply voltage, (c) a second power port for receiving the third power supply voltage, and (d) an internal voltage generation circuit which is selectively operable in either a first mode in which the second internal voltage is generated from the first power supply voltage, or a second mode in which the second internal voltage is generated from the third power supply voltage;
- and
- a control circuit which controls an operation of the memory device.
Dependencies are inferred from the claim text.