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AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Young Ahn, Yong-Woo Hyung, Young-Seok Kim, Man-Sug Kang
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The present invention discloses a novel insulating layer for use in semiconductor devices, the insulating layer having a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin films, each of a controlled, desired thickness, together with methods for forming the same. The insulating layer of the present invention has a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin filmsformed by the steps of: (a) depositing a silicon nitride thin film on a wafer, (b) depositing a boron nitride thin film on the silicon nitride thin film, and (c) forming the multi-layer nanolaminate thin film by alternately repeating steps (a) and (b).
A semiconductor device comprising a wafer having an insulating layer with bottom and top portions along at least a surface thereof, wherein said insulating layer consists essentially of alternating silicon nitride thin film layers and boron nitride thin film layers.
A method for forming an insulating layer on at least a surface of a semiconductor device, said method comprising the steps of:
A semiconductor device comprising a wafer having an insulating layer along at least a surface thereof, said insulating layer being formed by the process of:
Dependencies are inferred from the claim text.