Semiconductor device of multi-wiring structure and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsNoriaki Matsunaga, Yoshiaki Shimooka, Kazuyuki Higashi, Hideki Shibata
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Abstract
A plurality of wiring layers are laminated on an LSI chip. Each wiring layer includes an electrode to which is applied a mechanical pressure, a first insulating film formed in a region where it is necessary to have a high mechanical strength and having the electrode formed therein, a second insulating film formed in the same layer as the layer of the first insulating film and formed in a region where a mechanical strength higher than that of the first insulating layer is not required, and a wiring layer formed on the surface of the second insulating film.
Claims20
A semiconductor device of a multi-wiring structure, comprising:
- an electrode to which is applied a mechanical pressure;
- a first insulating film formed in a region where it is necessary to have a high mechanical strength and having said electrode formed therein;
- a second insulating film formed in the same layer as the layer of said first insulating film and formed in a region where a mechanical strength higher than that of said first insulating layer is not required;
- and
- a wiring layer formed on the surface of said second insulating film.
A semiconductor device of a multi-wiring structure, comprising:
- an electrode to which a mechanical pressure is applied;
- a nonporous insulating film formed in a region where it is necessary to have a high mechanical strength and having said electrode formed therein;
- a porous insulating film formed in the layer same as said nonporous insulating film and formed in a region where it is unnecessary to have a mechanical strength equal to that of said first insulating film;
- and
- a wiring layer formed in a surface region of said porous insulating film.
A semiconductor device having a multi-wiring structure, comprising:
- a first insulating film, which is formed in a first region in which a capacitor insulating film is formed, and releases a relatively small amount of a gas when heated;
- and
- a second insulating film formed in the layer same as said first insulating film and formed in a second region other than said first region.
A method of manufacturing a semiconductor device having a multi-wiring structure, comprising:
- coating a substrate with a film of an insulating material in which a crosslinking reaction or a foaming reaction is generated;
- subjecting the film of said insulating material to a heat treatment so as to bring about a crosslinking reaction or a foaming reaction, thereby forming a first insulating film on said substrate;
- selectively removing said first insulating film such that said first insulating film is selectively left unremoved on said substrate and is removed in the other region;
- and
- forming a second insulating film in the region where said first insulating film has been removed.
A method of manufacturing a semiconductor device having a multi-wiring structure, comprising:
- coating a substrate with a film of an insulating material in which a crosslinking reaction or a foaming reaction is generated;
- imparting energy to the film of said insulating material so as to selectively bring about a crosslinking reaction or a foaming reaction;
- removing the film of said insulating film in a region in which a crosslinking reaction or a foaming reaction has not taken place and leaving the film of said insulating material unremoved in a region in which a crosslinking reaction or a foaming reaction has taken place so as to form a first insulating film on said substrate;
- and
- forming a second insulating film in the region where the film of said insulating film has been removed.
A method of manufacturing a semiconductor device having a multi-wiring structure, comprising:
- forming on a substrate an insulating film of an insulating material in which a crosslinking reaction or a foaming reaction is generated;
- selectively forming a wiring in a surface region of said insulating film;
- and
- applying an alternating-current magnetic field so as to generate an eddy current in said wiring, thereby heating said wiring so as to selectively bring about a crosslinking reaction or a foaming reaction in that region of said insulating film which is positioned in the vicinity of said wiring.
Dependencies are inferred from the claim text.