Barrier material for copper structures
AssigneeInternational Business Machines Corporation
InventorsMichael Lane, F. R. McFeely, Conal Murray, Robert Rosenberg
Life of this patent
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Abstract
A barrier material that is particularly suited as a barrier layer in copper interconnects structures found in semiconductor structures. The barrier layer contains one or more regions with one region containing at least 50 atom percent of a copper interface metal. The copper interface metal is selected from ruthenium, rhodium, palladium, silver, gold, platinum, iridium, selenium, tellurium, or alloys thereof. The barrier layer also contains a dielectric interface material.
Claims38
A semiconductor structure comprising:
- a dielectric layer disposed on an underlayer;
- and
- a barrier layer disposed on the dielectric layer, wherein the barrier layer comprises a dielectric interface material, and a region of the barrier layer proximate to a conducting layer comprises at least 50 atom percent of a copper interface metal.
A semiconductor structure comprising:
- a dielectric layer disposed on an underlayer;
- a barrier layer disposed on the dielectric layer, wherein the barrier layer contains a dielectric interface material and a copper interface metal, and a region of the barrier layer proximate to the dielectric layer comprises at least 50 atom percent of the dielectric interface material;
- and
- a conducting layer containing copper or an alloy thereof, wherein a region of the barrier layer proximate to the conducting layer comprises at least 50 atom percent of the copper interface metal.
A barrier layer comprising a dielectric interface material and a copper interface metal, wherein a surface of the barrier layer proximate to a conducting material contains at least atom percent of the copper interface metal and an opposite surface of the barrier layer proximate to a dielectric contains at least 50 atom percent of the dielectric interface material.
A semiconductor structure comprising:
- a dielectric layer disposed on an underlayer;
- a barrier layer disposed on the dielectric layer;
- and
- a copper conducting layer disposed on the barrier layer, wherein the copper conducting layer contains less than 40% copper grains by volume with a (111) crystallographic orientation.
A method of making a barrier layer comprising:
- providing a dielectric;
- depositing a dielectric interface material on the dielectric to form a layer of dielectric interface material;
- and
- depositing a copper interface metal on the layer of dielectric interface material, wherein the barrier layer comprises a region with at least 50 atom percent of the copper interface metal.
A method of making a barrier layer comprising:
- providing a dielectric;
- and
- co-depositing a dielectric interface material and a copper interface metal on the dielectric, wherein the barrier layer comprises a region with at least 50 atom percent of the copper interface metal.
Dependencies are inferred from the claim text.