Semiconductor device and manufacturing process therefor as well as plating solution
AssigneeNEC Electronics Corporation
InventorKazuyoshi Ueno
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Abstract
An object of this invention is to improve stress-migration resistance and reliability in a semiconductor device comprising a metal region. In an insulating film 101 is formed a lower interconnection consisting of a barrier metal film 102 and a copper-silver alloy film 103, on which is then formed an interlayer insulating film 104. In the interlayer insulating film 104 is formed an upper interconnection consisting of a barrier metal film 106 and a copper-silver alloy film 111. The lower and the upper interconnections are made of a copper-silver alloy which contains silver to an amount more than a solid solution limit of silver to copper.
Claims21
A semiconductor device comprising a metal region on a semiconductor substrate, wherein a silver content is more than 1 wt % to the total amount of component metals in the metal region.
A semiconductor device comprising a metal region on a semiconductor substrate, wherein the metal region comprises copper and silver;
- and a silver content to the total amount of component metals in the metal region is more than a solid solution limit of silver to copper.
A semiconductor device comprising a metal region on a semiconductor substrate wherein a maximum hysteresis error in a temperature-stress curve in the metal region is 150 MPa or less.
A semiconductor device comprising a metal region on a semiconductor substrate wherein a recrystallization temperature of a component metal of the metal region is 200° C. or higher.
A process for manufacturing a semiconductor device comprising the steps of:
- forming a metal region on a semiconductor substrate;
- contacting the surface of the metal region with a silver-containing liquid;
- and
- heating the metal region.
A process for manufacturing a semiconductor device comprising the steps of:
- contacting a semiconductor substrate or a film formed thereon with a silver-containing solution to precipitate silver;
- forming a metal region on the precipitated silver;
- and
- heating the metal region.
A process for manufacturing a semiconductor device comprising the steps of contacting a device-forming surface of a semiconductor substrate with a silver-containing plating solution;
- and forming a silver-containing metal region on the semiconductor substrate.
Dependencies are inferred from the claim text.