Composite material member for semiconductor device and insulated and non-insulated semiconductor devices using composite material member

An insulated semiconductor device being a semiconductor device with a semiconductor substrate mounted on a supporting member through an insulating member, or a semiconductor device with a semiconductor substrate mounted on a supporting member through an insulating member and an intermediate metal member in succession,

• wherein the semiconductor device comprises a composite material member in which at least one of the supporting member and the intermediate metal member is a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 μm or larger exists in an interface formed by the composite metal plate and the metal layer.

A non-insulated semiconductor device being a semiconductor device with a semiconductor substrate mounted on a supporting member, or a semiconductor device with a semiconductor substrate mounted on a supporting member through an intermediate metal member,

• wherein the semiconductor device comprises a composite material member in which at least one of the supporting member and the intermediate metal member is a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 μm or larger exists in an interface formed by the composite metal plate and the metal layer.

A non-insulated semiconductor device being a semiconductor device with a semiconductor substrate placed between a pair of electrode members located opposite to each other, or a semiconductor device with the semiconductor substrate contacting an intermediate metal member at one main face thereof and placed between the pair of electrode members,

• wherein at least one of the electrode member and the intermediate metal member is a composite metal with particles composed of cuprous oxide dispersed in a copper matrix, a surface of the composite metal is covered with a metal layer, and a copper layer with thickness of 0.5 μm or larger exists in an interface formed by the composite metal and the metal layer.