DC or AC electric field assisted anneal
AssigneeInternational Business Machines Corporation
InventorsArne W. Ballantine, John J. Ellis-Monaghan, Toshihura Furukawa, Jeffrey D. Gilbert, Glenn R. Miller, James A. Slinkman
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Abstract
A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
Claims53
A method for forming a desired junction profile in a semiconductor substrate, comprising:
- introducing at least one dopant into the semiconductor substrate;
- and then diffusing the at least one dopant by annealing the semiconductor substrate while exposing the semiconductor substrate to a DC or AC field.
The method of claims wherein the electrical field is an AC electrical field.
A device for forming a desired junction profile in a semiconductor substrate, the device comprising:
- a means for annealing a semiconductor substrate in which at least one dopant has been diffused, the annealing means comprising at least one heat source;
- and
- means for producing a DC or AC electrical field and exposing the semiconductor substrate to the DC or AC electrical field simultaneous with the annealing
Dependencies are inferred from the claim text.