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US 2003/0201508 A1Published application
SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
AssigneeSeiko Epson Corporation
InventorMasahiro Yasukawa
Life of this patent
Estimating the term…
Abstract
An SOI (Silicon On Insulator) substrate is provided with: a support substrate (201); a single crystal silicon layer (202) disposed above one surface of the support substrate; an insulation portion (205) disposed between the support substrate and the single crystal silicon layer, the insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film (204).
Claims14
An electro-optical apparatus comprising:
- a support substrate;
- a pixel electrode disposed above said support substrate;
- a transistor element disposed above said support substrate, connected to said pixel electrode and comprising a semiconductor layer including a channel region;
- a wiring disposed on said support substrate and connected to said transistor element;
- a light shield film disposed on said support substrate for covering at least the channel region from a side of said support substrate;
- and
- an insulation portion disposed at at least one of an interlayer space between said light shield film and said semiconductor layer and an interlayer space between said support substrate and said light shield film, and including a silicon nitride film or silicon nitride oxide film.
4 more elements
An electronic equipment comprising an electro-optical apparatus,
- said electro-optical apparatus comprising:
- a support substrate;
- a pixel electrode disposed above said support substrate;
- a transistor element disposed above said support substrate, connected to said pixel electrode and comprising a semiconductor layer including a channel region;
- a wiring disposed on said support substrate and connected to said transistor element;
- a light shield film disposed on said support substrate for covering at least the channel region from a side of said support substrate;
- and
- an insulation portion disposed at at least one of an interlayer space between said light shield film and said semiconductor layer and an interlayer space between said support substrate and said light shield film, and including a silicon nitride film or silicon nitride oxide film.
5 more elements
Dependencies are inferred from the claim text.