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US 2003/0201505 A1Published application
Semiconductor device having an insulated gate and a fabrication process thereof
AssigneeFujitsu Limited
InventorHajime Kurata
Life of this patent
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Abstract
A semiconductor device includes a T-shaped gate on a gate insulation film, wherein the T-shaped gate includes a lower polycrystal layer containing Si and Ge and an upper polycrystal layer of polysilicon.
Claims10
A semiconductor device, comprising:
- a substrate including a semiconductor layer at least on a top part thereof;
- a gate insulation film provided on said semiconductor layer;
- and
- a gate electrode provided on said gate insulation film,
- said gate electrode comprising a first polycrystal layer in contact with said gate insulation film, said first polycrystal layer containing at least Si and Ge, and a second polycrystal layer provided on said first polycrystal layer,
- said first polycrystal layer having a reduced lateral size as compared with said second polycrystal layer, said first and second polycrystal layers thereby forming a T-shaped gate electrode.
3 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- forming a gate insulation film on a substrate, said substrate including a semiconductor layer at least on a top part thereof;
- depositing a first polycrystal layer containing at least Si and Ge on said semiconductor layer;
- depositing a second polycrystal layer of Si on said first polycrystal layer;
- patterning said first and second polycrystal layers to form a gate electrode defined by a pair of sidewalls;
- and
- applying an oxidation process to said first and second polycrystal layers such that said first and second polycrystal layers undergo oxidation at said both sidewalls.
3 more elements
Dependencies are inferred from the claim text.