Semiconductor device and manufacturing method thereof
OwnerHiroshi Komatsuinventor
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Abstract
A gate oxide film is formed on a silicon substrate, and a gate electrode is formed on the oxide film. The gate electrode is a polysilicon film that is given p+ conductivity because of doping with B. An Si3N4 film is formed on the top surface of the gate electrode and sidewall spacers of Si3N4 are formed on the side walls of the gate electrode. An interlayer insulating film of SiO2 is formed on the Si3N4 film, the sidewall spacers, and a LOCOS oxide film. This structure inhibits diffusion of B from the gate electrode to the interlayer insulating film in a heating process that is executed after the formation of the gate electrode.
Claims21
A semiconductor device comprising:
- a gate electrode that is formed on a semiconductor substrate via a gate insulating film and in which an impurity is introduced at a high concentration;
- an insulating or conductive film containing nitrogen that is formed on a top surface and side walls of the gate electrode;
- and
- an interlayer insulating film formed on the insulating or conductive film and containing at least SiO2.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a gate insulating film on a semiconductor device;
- depositing a conductive film on the gate insulating film;
- introducing an impurity into the conductive film;
- depositing a first insulating film containing nitrogen on the conductive film;
- processing the conductive film and the first insulating film into a pattern in which a remaining portion of the first insulating film exists on a remaining portion of the conductive film that is a gate electrode;
- forming a second insulating film containing nitrogen on side walls of the remaining first insulating film and the gate electrode;
- and
- depositing an interlayer insulating film of SiO2 on the second insulating film.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a gate insulating film on a semiconductor substrate;
- depositing a refractory metal silicide film on the gate insulating film;
- forming a thin film for preventing impurity outward diffusion on the refractory metal silicide film;
- and
- introducing an impurity into the refractory metal silicide film through the thin film.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a gate insulating film on a semiconductor substrate;
- depositing a refractory metal silicide film on the gate insulating film;
- patterning the refractory metal silicide film into a gate electrode;
- forming a thin film for preventing impurity outward diffusion on all or part of surfaces of the gate electrode;
- and
- introducing an impurity into the gate electrode through the thin film.
Dependencies are inferred from the claim text.