Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsAkira Inoue, Takeshi Takagi, Yoshihiro Hara, Minoru Kubo
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Abstract
A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
Claims25
A method for fabricating a semiconductor device including a dielectric film as an element, the method comprising the steps of:
- a) forming the dielectric film over a substrate;
- and
- b) applying an electromagnetic wave in the frequency range from 1 GHz to 100 GHz, both inclusive, from above the dielectric film.
A semiconductor device, characterized by comprising:
- a substrate;
- a semiconductor layer provided in part of the substrate;
- a gate insulating film provided on the semiconductor layer;
- a gate electrode provided on the gate insulating film;
- source/drain regions of a first conductivity type defined in the semiconductor layer each to a side of the gate electrode;
- a channel region for carriers of the first conductivity type defined in the semiconductor layer between the source/drain regions of the first conductivity type;
- a body region of a second conductivity type that is defined in the semiconductor layer under the channel region for carriers of the first conductivity type and has a potential higher than that in the channel region for carriers of the first conductivity type with respect to carriers in a band edge where carriers flow;
- and
- a conductor member for electrically connecting the gate electrode and the body region of the second conductivity type,
- wherein the channel region for carriers of the first conductivity type is in direct contact with the gate insulating film.
Dependencies are inferred from the claim text.