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US 2003/0201492 A1Published application
Double gate field effect transistor with diamond film
AssigneeIntel Corporation
InventorKramadhati V. Ravi
Life of this patent
Estimating the term…
Abstract
A double gate silicon over insulator transistor may be formed wherein the bottom gate electrode is formed of a doped diamond film. The doped diamond film may be formed in the process of semiconductor manufacture resulting in an embedded electrode. The diamond film may be advantageous as a heat spreader.
Claims29
A method comprising:
- forming a diamond film over a semiconductor structure;
- forming a dielectric over said film;
- and
- forming a single crystalline layer over said diamond film and dielectric layer.
1 more element
An integrated circuit comprising:
- a semiconductor structure;
- a diamond film over said structure;
- a dielectric over said diamond film;
- and
- a single crystal film over said dielectric.
2 more elements
An integrated circuit comprising:
- a semiconductor structure;
- a second gate including a diamond film over said structure;
- a dielectric over said diamond film;
- a single crystal film over said dielectric;
- and
- a transistor including a first gate formed over said film and a source and drain formed in said film.
3 more elements
Dependencies are inferred from the claim text.