Semiconductor device and method of manufacturing thereof
AssigneeHitachi, Ltd.
InventorsMasahiko Hiratani, Shinichiro Kimura, Tomoyuki Hamada
Life of this patent
Estimating the term…
Abstract
By using a solid solution of tantalum pentoxide and niobium pentoxide as a dielectric film installed between upper electrode and lower electrode in a capacitor which is used in a semiconductor device, the capacitor structure can be simplified to improve reliability of the semiconductor device while reducing the production cost thereof.
Claims27
A semiconductor device containing a capacitor, wherein the capacitor has a lower electrode and an upper electrode, and a dielectric film formed between the above-mentioned electrodes, said dielectric film being made of a solid solution of tantalum pentoxide and niobium pentoxide.
A semiconductor device comprising
- a semiconductor substrate,
- an MOS transistor formed on a main surface of the semiconductor substrate, a plug electrically connected to a source region or a drain region of the MOS transistor,
- an insulating layer formed on the plug,
- a concave formed in the insulating layer, and
- a capacitor formed in the concave, wherein said capacitor comprising
- a lower electrode formed on at least inner side and bottom surface of the concave and electrically connected to the plug,
- a dielectric film made of a solid solution of tantalum pentoxide and niobium pentoxide and formed on the lower electrode, and
- an upper electrode formed on the dielectric film.
A semiconductor device containing a capacitor, wherein the capacitor has a lower electrode and an upper electrode, and a dielectric film formed between the above-mentioned electrodes, said dielectric film being made of (tantalum, niobium)pentoxide.
A semiconductor device comprising
- a semiconductor substrate,
- an MOS transistor formed on a main surface of the semiconductor substrate,
- a plug electrically connected to a source region or a drain region of the MOS transistor,
- an insulating layer formed on the plug,
- a concave formed in the insulating layer, and
- a capacitor formed in the concave, wherein said capacitor comprising
- a lower electrode formed on at least inner side and bottom surface of the concave and electrically connected to the plug,
- a dielectric film made of (tantalum, niobiuim)pentoxide and formed on the lower electrode, and
- an upper electrode formed on the dielectric film.
A method for manufacturing a semiconductor device, which comprises
- a step of forming a concave in an insulating layer,
- a step of forming a lower electrode on at least inner side wall or bottom surface of the concave,
- a step of forming a dielectric film made of a solid solution of tantalum pentoxide and niobium pentoxide having a thickness of 10 nm or less by a chemical vapor deposition method using a cocktail source of pentaethoxytantalum and pentaethoxyniobium on the lower electrode, and
- a step forming an upper electrode on the dielectric film,
- wherein a capacitor comprising the lower electrode, the dielectric film and the upper electrode.
Dependencies are inferred from the claim text.