Laser heat treatment method, laser heat treatment apparatus, and semiconductor device
AssigneesMitsubishi Denki Kabushiki Kaisha, Seiko Epson Corporation
InventorsTetsuya Ogawa, Hidetada Tokioka, Yukio Sato, Mitsuo Inoue, Tomohiro Sasagawa, Mitsutoshi Miyasaka
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Abstract
The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed on a substrate.
Claims18
A laser heat treatment method, comprising the steps of:
- forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length;
- and
- directing said linear beam onto a film material formed on a substrate.
A semiconductor device, comprising a plurality of transistors each including an active layer, wherein a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm is formed into a linear beam having a width and a length, and said linear beam is directed onto a film material formed on a substrate, whereby said active layer is formed from said heat-treated film material, and at least one of said plurality of transistors has a drain current flowing in a direction approximately parallel to a width direction of said linear beam.
A laser heat treatment apparatus, comprising:
- a pulse laser source having a wavelength of 350 nm to 800 nm, and
- linear-beam-forming optical means for forming a laser beam generated from the pulse laser source into a linear beam.
Dependencies are inferred from the claim text.