Semiconductor manufacturing method for low-k insulating film
AssigneeHitachi, Ltd.
InventorsDaisuke Ryuzaki, Takeshi Furusawa
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Abstract
Disclosed is a semiconductor device having a dielectric film of a stacked structure, comprising a low dielectric constant film containing silicon, oxygen and carbon a modified layer for the low dielectric constant film containing silicon, oxygen, carbon and fluorine and a dielectric protection film formed successively on a semiconductor substrate, the semiconductor device being manufactured by applying a plasma treatment using a fluorine-containing gas to the surface of an organic siloxane film to form a modified layer and then forming a dielectric protection film, which can improve the adhesivity with the dielectric protection film without increasing the dielectric constant of the organic siloxane film to prevent delamination.
Claims20
A semiconductor device having a dielectric film of a stacked structure, formed on a semiconductor substrate, comprising a low dielectric constant film containing silicon, oxygen and carbon and having a dielectric constant of 3 or less;
- a modified layer formed on the surface of the low dielectric constant film for the low dielectric constant film containing silicon, oxygen, carbon and fluorine;
- and a dielectric protection film formed on the modified layer.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a low dielectric constant film containing silicon, oxygen and carbon and having a dielectric constant of 3 or less, on a semiconductor substrate;
- applying a plasma treatment with a gas containing fluorine on the surface of the low dielectric constant film thereby forming a modified layer for the low dielectric constant film containing silicon, oxygen, carbon and fluorine;
- and
- forming a dielectric protection layer on the modified layer.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a low dielectric constant film containing silicon, oxygen and carbon and having a dielectric constant of 3 or less, on a semiconductor substrate including a semiconductor device and wirings;
- applying a plasma treatment with a gas containing fluorine to the surface of the low dielectric constant film thereby forming a modified layer for the low dielectric constant film containing silicon, oxygen, carbon and fluorine;
- forming a dielectric protection layer on the modified layer;
- forming trenches or holes to the dielectric film of the stacked structure comprising the low dielectric constant film, the modified layer and the dielectric protection layer;
- forming a metal film in the inside of the trench or hole or on the dielectric protection layer;
- and
- removing the metal films other than those in the inside of the trenches or the inside of the holes by a chemical mechanical polishing method thereby filling the metals in the trenches or holes to form wirings.
A method of manufacturing a semiconductor device comprising the steps of:
- patterning a metal film formed on a semiconductor substrate including semiconductor devices and wirings to form first wirings;
- forming a low dielectric film of a dielectric constant of 3 or less containing silicon, oxygen, and carbon;
- applying a plasma treatment with a gas containing fluorine to the surface of the low dielectric constant film thereby forming a modified layer of the low dielectric constant film containing silicon, oxygen, carbon and fluorine;
- forming a dielectric protection film on the modified layer;
- forming holes through which the surface of the first wirings is exposed to the dielectric film of a stacked structure comprising the low dielectric film, the modified layer and the dielectric protection film;
- forming a metal film in the inside of the hole and on the dielectric protection film;
- and
- removing the metal films other than those in the holes by a chemical mechanical polishing method thereby filling the metal in the inside of the holes to form second wirings.
Dependencies are inferred from the claim text.