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US 2003/0201450 A1Published application
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama
Life of this patent
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Abstract
There is provided a semiconductor device including a picture display function and a picture capturing function on the same substrate. The semiconductor device includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, which are provided on the same substrate. Moreover, in the semiconductor device, the structure/manufacturing process of the image sensor is made coincident with the structure/manufacturing process of the pixel matrix and the peripheral driver circuit, so that the semiconductor device can be manufactured at low cost.
Claims12
A semiconductor device comprising:
- an active matrix substrate including a plurality of pixels arranged in a matrix form and a plurality of sensor portions arranged in a matrix form;
- and
- a backlight;
- wherein each of the sensor portions includes a photoelectric conversion element;
- and
- wherein the backlight is to be used as a light source when an external picture is read.
3 more elements
A semiconductor device comprising:
- an active matrix substrate including a plurality of pixels arranged in a matrix form and a plurality of sensor portions arranged in a matrix form;
- and
- a backlight;
- wherein each of the pixels includes a pixel reflecting electrode, and the pixel reflecting electrode includes a plurality of windows for allowing light to pass;
- wherein each of the sensor portions includes a photoelectric conversion element;
- and
- wherein the backlight is to be used as a light source when an external picture is read.
4 more elements
A semiconductor device comprising:
- an active matrix substrate including a plurality of pixels arranged in a matrix form and a plurality of sensor portions arranged in a matrix form;
- and
- a backlight;
- wherein each of the pixels includes a pixel transparent electrode, and the pixel transparent electrode is disposed over said each of the sensor portions;
- wherein each of the sensor portions includes a photoelectric conversion element;
- and
- wherein the backlight is to be used as a light source when an external picture is read.
4 more elements
A semiconductor device comprising:
- a transparent substrate;
- a plurality of light shielding films on said transparent substrate;
- a plurality of first and second thin film transistors disposed over said light shielding films, respectively;
- a first interlayer insulating film over said first and second thin film transistors;
- a plurality of photoelectric conversion elements disposed on said first interlayer insulating film, said photoelectric conversion elements connected to said first thin film transistors;
- a second insulating film over said photoelectric conversion elements and said first and second thin film transistors;
- a pixel electrode on said second insulating film, said pixel electrode connected to said second thin film transistors;
- and
- a backlight disposed a back surface of the transparent substrate;
- wherein the backlight is to be used as a light source when an external picture is read.
7 more elements
A semiconductor device comprising:
- a transparent substrate;
- a plurality of light shielding films on said transparent substrate;
- a plurality of first and second thin film transistors disposed over said light shielding films, respectively;
- a first interlayer insulating film over said first and second thin film transistors;
- a plurality of photoelectric conversion elements disposed on said first interlayer insulating film, said photoelectric conversion elements connected to said first thin film transistors, respectively;
- a second insulating film over said photoelectric conversion elements and said first and second thin film transistors;
- a plurality of pixel reflecting electrodes on said second insulating film, said pixel reflecting electrodes connected to said second thin film transistors, respectively;
- and
- a backlight disposed a back surface of the transparent substrate;
- wherein the backlight is to be used as a light source when an external picture is read, and
- wherein windows are provided in said pixel reflecting electrode over at least said photoelectric conversion elements.
8 more elements
A semiconductor device comprising:
- a transparent substrate;
- a plurality of light shielding films on said transparent substrate;
- a plurality of first and second thin film transistors disposed over said light shielding films, respectively;
- a first interlayer insulating film over said first and second thin film transistors;
- a plurality of photoelectric conversion elements disposed on said first interlayer insulating film, said photoelectric conversion elements connected to said first thin film transistors, respectively;
- a second insulating film over said photoelectric conversion elements and said first and second thin film transistors;
- a plurality of pixel transparent electrodes on said second insulating film, said pixel reflecting electrodes connected to said second thin film transistors, respectively;
- and
- a backlight disposed a back surface of the transparent substrate;
- wherein the backlight is to be used as a light source when an external picture is read.
7 more elements
Dependencies are inferred from the claim text.