Semiconductor device and method of manufacturing same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Satoshi Seo, Hideaki Kuwabara
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Abstract
A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.
Claims66
A semiconductor device comprising:
- a field effect transistor provided on a semiconductor substrate;
- a light emitting element comprising a first electrode connected to the field effect transistor, a layer containing an organic compound on the first electrode, and a second electrode on the layer;
- and
- an insulating film covering an end portion of the first electrode,
- wherein the first electrode has an inclined surface directed toward a center of the first electrode, and the inclined surface reflects light emitted from the layer containing an organic chemical compound.
The semiconductor device according to 1, wherein an inclination angle of the inclined surface is more than 30° but less than 70°.
A semiconductor device comprising a luminescent element comprising
- a field effect transistor provided on a semiconductor substrate;
- a light emitting element comprising a first electrode connected to the field effect transistor, a layer containing an organic compound on the first electrode, and a second electrode on the layer;
- and
- an insulating film covering an end portion of the first electrode,
- wherein a center of the first electrode is concave-shaped to have a smaller film thickness than that of the end thereof.
A semiconductor device comprising a luminescent element comprising
- a field effect transistor provided on a semiconductor substrate;
- a light emitting element comprising a first electrode connected to the field effect transistor, a layer containing an organic compound on the first electrode, and a second electrode on the layer;
- and
- an insulating film covering an end portion of the first electrode,
- wherein the first electrode has a multi-layer, and the number of the multi-layer at a center of the first electrode is greater than that at an end thereof.
The semiconductor device according to 31, wherein the first electrode comprises an inclined surface directed toward a center thereof, and an inclination angle is more than 30° but less than 70°.
A method of manufacturing a semiconductor device having a light emitting element comprising an anode, a layer containing an organic compound on the anode, and a cathode on the layer containing an organic compound, the method comprising:
- forming a field effect transistor on a semiconductor substrate;
- forming an insulating film covering an end portion of a first electrode comprising a laminated metallic layers, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor;
- performing etching with the insulating film as a mask to thin a center of the first electrode so that an inclined surface of the first electrode is exposed along an edge portionof the first electrode;
- forming the layer containing an organic compound on the center and the inclined surface of the first electrode;
- and
- forming a second electrode comprising a metallic thin film permitting permeation of light, on the layer containing an organic compound.
A semiconductor device comprising:
- a field effect transistor provided on a semiconductor substrate;
- a light emitting element comprising a first electrode connected to the field effect transistor, a layer containing an organic compound on the first electrode, and a second electrode on the layer;
- and
- an insulating film covering an end portion of the first electrode,
- wherein the first electrode has a depression, and a bottom width of the depression is smaller than an top width of the depression.
The semiconductor device according to 52, wherein the first electrode comprises an inclined surface directed toward a center thereof, and an inclination angle is more than 30° but less than 70°.
Dependencies are inferred from the claim text.