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US 2003/0201446 A1Published application
Semiconductor device, and method for manufacturing the same
AssigneeCanon Kabushiki Kaisha
InventorToshihiko Ouchi
Life of this patent
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Abstract
The present invention provides a semiconductor device including an element that is considered to have less environmental problem (for example iron), and a method for manufacturing the same. More specifically, in a semiconductor device having multiple layers, at least one of the layers includes iron suicide. At least part of the layer including iron silicide is subjected to oxidation processing.
Claims20
A semiconductor device having multiple layers, said device comprising:
- at least one layer including iron suicide,
- wherein at least part of said layer including iron silicide is subjected to oxidation processing.
A light emitting device comprising:
- an active layer;
- and
- clad layers,
- wherein said active layer includes beta-iron suicide that is oxidized at portions surrounding said active layer.
1 more element
Dependencies are inferred from the claim text.