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US 2003/0201441 A1Published application
Semiconductor light emitting device and method for producing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShinji Nakamura, Masahiro Ishida, Masaaki Yuri, Osamu Imafuji, Kenji Orita
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Abstract
A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a <1, 1, −2, 0> direction.
Claims14
A semiconductor light emitting device, comprising:
- a substrate;
- a light emitting layer;
- a semiconductor layer of a hexagonal first III-group nitride crystal;
- and
- a cladding layer of a second III-group nitride crystal, wherein:
- a stripe groove is provided in the semiconductor layer along a <1, 1, −2, 0> direction.
3 more elements
A method for producing a semiconductor light emitting device, comprising the steps of:
- providing a light emitting layer;
- providing a semiconductor layer of hexagonal first III-group nitride crystal;
- providing a stripe groove in the semiconductor layer along a <1, 1, −2, 0> direction by an isotropic dry etching process;
- and
- providing a cladding layer of a second III-group nitride crystal on the semiconductor layer after the step of providing the stripe groove.
2 more elements
Dependencies are inferred from the claim text.