Thin film transistor formed on a transparent substrate
AssigneeNEC Corporation
InventorsYoshinobu Satou, Katsuhisa Yuda, Hiroshi Tanabe
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Abstract
A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
Claims18
A thin-film transistor formed on a transparent substrate and comprising a gate electrode film layer and a source and drain region film layer, said thin-film transistor further comprising an alignment mark made of one and the same constituent material as a constituent material of at least one of said gate electrode film layer and said source and drain region, and formed at the same position as at least one of said gate electrode film layer or said source and drain region is formed.
A thin-film transistor formed on a transparent substrate and comprising a gate electrode film layer, a source and drain region film layer, and a light-blocking layer, disposed between said transistor and said transparent substrate, blocking light passing through said transparent substrate that is incident from said transparent substrate side from striking an active layer of said transistor, said thin-film transistor further comprising an alignment mark made of one and the same constituent material as a constituent material of said light-blocking layer and formed at one and the same position as said light-blocking layer, is formed.
A thin-film transistor formed on a transparent substrate and comprising a gate electrode film layer, a source and drain region film layer, and a shield layer, disposed between said transistor and said transparent substrate, shielding electromagnetic waves passing through said transparent substrate that are incident from said transparent substrate, from striking a wiring portion of said transistor, said thin-film transistor further comprising an alignment mark made of one and the same constituent material as a constituent material of said shield layer and formed at one and the same position as said shield layer, is formed.
An apparatus for manufacturing a thin-film transistor, comprising:
- a light source means;
- a mask means for forming a light beam emitted from said light source means into a prescribed shape and forming a light path directing the shaped beam in a prescribed direction;
- and
- a substrate movement means onto which a substrate including a semiconductor device constituent part rests, movable so as to cause a prescribed location of said semiconductor device constituent part to oppose the light path,
- wherein said mask means comprises a alignment mark detection means for detecting an alignment mark provided on said semiconductor device constituent part.
A method for manufacturing a thin-film using an apparatus having a light source, a mask means for forming a light beam emitted from said light source into a prescribed shape and forming a light path directing the shaped beam in a prescribed direction and a substrate movement means onto which a substrate including a semiconductor device constituent part rests, movable so as to cause a prescribed location of said semiconductor device constituent part to oppose the light path, whereby an operation of aligning a desired light path in said mask means with a desired location on said semiconductor device constituent part is performed by referencing an alignment mark provided on said semiconductor device constituent part.
Dependencies are inferred from the claim text.