US 2003/0201439 A1Published application

Semiconductor device and method of manufacturing the same

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsShunpei Yamazaki, Yukio Tanaka, Jun Koyama, Mitsuaki Osame, Satoshi Murakami, Hideto Ohnuma, Etsuko Fujimoto, Hidehito Kitakado

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Abstract

A semiconductor device in which TFT's of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

Claims6

Dependent claims

A method of manufacturing a semiconductor device having a pixel unit and a drive circuit unit over a same substrate, comprising:

forming a channel-forming region, a source region, a drain region and at least one lightly doped region sandwiched between either of said source and drain region and said channel-forming region in an active layer of NTFT forming said drive circuit unit;
forming a channel-forming region, a source region and a drain region in an active layer of PTFT forming said drive circuit unit;
and
forming a channel-forming region, a source region, a drain region, and at least one lightly doped region sandwiched between either of said source and drain region and said channel-forming region in an active layer of pixel TFT forming said pixel unit,
wherein said lightly doped region of said NTFT forming said drive circuit unit is formed to be overlapped on said gate wiring of said NTFT forming said drive circuit unit with said gate insulating film interposed therebetween,
wherein said lightly doped region of said pixel TFT is formed not to be overlapped on said gate wiring of said pixel TFT with said gate insulating film interposed therebetween, and
wherein a storage capacitor in said pixel unit are formed by a light-shielding film formed over said pixel TFT, an oxide of a light-shielding film and a pixel electrode.

4 more elements

A method of manufacturing a semiconductor device having a pixel unit comprising a plurality of pixel TFTs and a drive circuit unit comprising a plurality of drive TFTs over a same substrate, comprising:

forming an active layer comprising a semiconductor film over said substrate;
forming a gate-insulating film on said active layer;
forming an electrically conducting film on said gate-insulating film;
forming a gate wiring of NTFT forming said drive circuit unit by patterning said electrically conducting film;
forming n-type regions in said active layer of NTFT forming said drive circuit unit by adding an element belonging to the Group 15 of periodic table using said gate wiring of said NTFT forming said drive circuit unit as a mask,
forming n-type regions under said gate wiring of said NTFT forming said drive circuit unit by diffusing said n-type regions by heat treatment;
forming a gate wiring of said pixel TFT by patterning said electrically conducting film;
forming n-type regions in said active layer of said pixel TFT by adding an element belonging to the Group 15 of periodic table by using said gate wiring of said pixel TFT as a mask;
forming n+-type regions in said active layers of NTFTs forming said drive circuit unit and in said active layers of said pixel TFT by adding an element belonging to the Group 15 of periodic table;
forming a gate wiring of said PTFT forming said drive circuit unit by patterning said electrically conducting film;
forming p+-type regions in said active layer of PTFT forming said drive circuit unit by adding an element belonging to the Group 13 of periodic table by using said gate wiring of PTFT forming said drive circuit unit as a mask;
forming an interlayer-insulating film comprising a resin film over said NTFT and PTFT forming said drive circuit unit and over said pixel TFT;
forming a light-shielding film on said interlayer-insulating film;
forming an oxide of said light-shielding film on said surface of said light-shielding film;
and
forming a pixel electrode in contact with said oxide of said light-shielding film and to be overlapped on said light-shielding film.

13 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/446,187Filed 28 May 2003
Priority: JP 11-03366712 Feb 1999
Published: 30 Oct 2003
Term ends: Not estimatedThe source records don’t support an estimate.

Classification22 codes

G02F 1/13454
Conductors connecting electrodes to cell terminals: drivers integrated on the active matrix substrate
G02F 1/136213
Active matrix addressed cells: storage capacitors associated with the pixel electrode
H10D 30/0314
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon

Family

Application09/498,646Division · filed 7 Feb 2000
Application10/446,187Division · filed 28 May 2003
US 6,576,924 B1Related patent
US 7,288,789 B2Related patent
US 2003/0201439 A1This patent

From the US filing history. Foreign family members aren’t listed.