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US 2003/0201435 A1Published application
Semiconductor device including active matrix circuit
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHideomi Suzawa
Life of this patent
Estimating the term…
Abstract
There is provided a combination of doping process and use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit of the same conductivity type as that of the thin film transistor of the active matrix circuit to include both of N-type and P-type impurities. Also, a thin film transistor in an active matrix circuit has offset regions by using side walls, and another thin film transistor in a peripheral circuit has a lightly doped region by using side walls.
Claims18
A semiconductor device comprising:
- a semiconductor film formed over a substrate;
- a gate electrode formed adjacent to the semiconductor film with a gate insulating film interposed therebetween;
- a first insulating film formed over the semiconductor film;
- a second insulating film formed over the first insulating film;
- and
- a pixel electrode formed over the second insulating film;
- wherein the first insulating film has a first contact hole extending to the semiconductor film,
- wherein the second insulating film has a second contact hole extending to the semiconductor film through the first contact hole,
- wherein a diameter of the first contact hole is larger than that of the second contact hole, and
- wherein the pixel electrode is connected to the semiconductor film through the first contact hole and the second contact hole.
7 more elements
A semiconductor device comprising:
- a semiconductor film formed over a substrate;
- a gate electrode formed adjacent to the semiconductor film with a gate insulating film interposed therebetween;
- a first insulating film formed over the semiconductor film;
- a second insulating film formed over the first insulating film;
- and
- a pixel electrode formed over the second insulating film;
- wherein the first insulating film has a first contact hole extending to the semiconductor film,
- wherein the second insulating film has a second contact hole extending to the semiconductor film through the first contact hole,
- wherein a diameter of the first contact hole is larger than that of the second contact hole,
- wherein the pixel electrode is connected to the semiconductor film through the first contact hole and the second contact hole, and
- wherein the first insulating film comprises silicon oxide.
8 more elements
A semiconductor device comprising:
- a semiconductor film formed over a substrate;
- a gate electrode formed adjacent to the semiconductor film with a gate insulating film interposed therebetween;
- a first insulating film formed over the semiconductor film;
- a second insulating film formed over the first insulating film;
- and
- a pixel electrode formed over the second insulating film;
- wherein the first insulating film has a first contact hole extending to the semiconductor film,
- wherein the second insulating film has a second contact hole extending to the semiconductor film through the first contact hole,
- wherein a diameter of the first contact hole is larger than that of the second contact hole,
- wherein the pixel electrode is connected to the semiconductor film through the first contact hole and the second contact hole, and
- wherein the second insulating film comprises silicon nitride.
8 more elements
A semiconductor device comprising:
- a semiconductor film formed over a substrate;
- a gate electrode formed adjacent to the semiconductor film with a gate insulating film interposed therebetween;
- a first insulating film formed over the semiconductor film;
- a second insulating film formed over the first insulating film;
- and
- a pixel electrode formed over the second insulating film;
- wherein the first insulating film has a first contact hole extending to the semiconductor film,
- wherein the second insulating film has a second contact hole extending to the semiconductor film through the first contact hole,
- wherein the second insulating film entirely covers an inner wall surface of the first contact hole, and
- wherein the pixel electrode is connected to the semiconductor film through the first contact hole and the second contact hole.
7 more elements
A semiconductor device comprising:
- a semiconductor film formed over a substrate;
- a gate electrode formed adjacent to the semiconductor film with a gate insulating film interposed therebetween;
- a first insulating film formed over the semiconductor film;
- a second insulating film formed over the first insulating film;
- and
- a pixel electrode formed over the second insulating film;
- wherein the first insulating film has a first contact hole extending to the semiconductor film, wherein the second insulating film has a second contact hole extending to the semiconductor film through the first contact hole,
- wherein the second insulating film entirely covers an inner wall surface of the first contact hole,
- wherein the pixel electrode is connected to the semiconductor film through the first contact hole and the second contact hole, and
- wherein the first insulating film comprises silicon oxide.
7 more elements
A semiconductor device comprising:
- a semiconductor film formed over a substrate;
- a gate electrode formed adjacent to the semiconductor film with a gate insulating film interposed therebetween;
- a first insulating film formed over the semiconductor film;
- a second insulating film formed over the first insulating film;
- and
- a pixel electrode formed over the second insulating film;
- wherein the first insulating film has a first contact hole extending to the semiconductor film,
- wherein the second insulating film has a second contact hole extending to the semiconductor film through the first contact hole,
- wherein the second insulating film entirely covers an inner wall surface of the first contact hole,
- wherein the pixel electrode is connected to the semiconductor film through the first contact hole and the second contact hole, and wherein the second insulating film comprises silicon nitride.
7 more elements
Dependencies are inferred from the claim text.