Plasma processing method and plasma processing apparatus
AssigneeHitachi High-Technologies Corporation
InventorsSusumu Tauchi, Masanori Kadotani, Muneo Furuse, Motohiko Yoshigai
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Abstract
Plasma is generated in a vacuum processing apparatus and a high-frequency voltage is applied to a lower electrode on which a wafer is placed. The high-frequency voltage applied to the lower electrode is subjected to periodical on-off modulation, the on-off duty ratio of which is determined for each wafer or each plurality of wafers, to carry out plasma processing on the wafer. As a result, in the plasma processing carried out on the wafer, the wafer is fabricated with a high degree of reproducibility by suppressing variations in fabricated-line dimension from wafer to wafer without decreasing the throughput.
Claims14
A plasma processing method of processing a sample by using a high-frequency electromagnetic wave wherein:
- said high-frequency electromagnetic wave is applied periodically with each period divided into a plurality of sub-periods along the time axis, with the voltage's amplitude of said high-frequency electromagnetic wave varying from one of said sub-periods to another and with an applied power of said high-frequency electromagnetic wave independently controllable during at least one of said sub-periods;
- and
- said applied power of said high-frequency electromagnetic wave is controlled during at least one of said sub-periods for each processing unit of said sample.
A plasma processing method of processing a sample by using a high-frequency electromagnetic wave wherein:
- said high-frequency electromagnetic wave is applied periodically with each period divided into a plurality of sub-periods along the time axis and with an applied power of each of said sub-periods as well as a duty ratio of each of said sub-periods independently controllable;
- and
- a processing state of said sample is monitored and, in accordance with a change in said processing state, said applied power of each of said sub-periods and/or said duty ratio of each of said sub-periods are subjected to feedback control for each processing unit of said sample.
A plasma processing apparatus for processing a sample by using a high-frequency electromagnetic wave wherein:
- said high-frequency electromagnetic wave is applied periodically with each period divided into a plurality of sub-periods along the time axis, with the voltage's amplitude of said high-frequency electromagnetic wave varying from one of said sub-periods to another and with an applied power of said high-frequency electromagnetic wave independently controllable during each of said sub-periods;
- and
- there is provided an etching-condition adjustment unit for controlling said applied power of said high-frequency electromagnetic wave during each of said sub-periods for each processing unit of said sample.
Dependencies are inferred from the claim text.