Method of treating an insulating layer
AssigneeTrikon Holdings Limited
InventorChristopher David Dobson
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Abstract
This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapour and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapour and/or oxygen.
Claims11
A method of treating an insulating layer in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting the absorption of or removing water vapour and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapour and/or oxygen.
A method as claimed in any one of the preceding claims wherein the insulating layer has a dielectric constant of less than 4.
A method as claimed in any one of the preceding claims wherein the insulating layer includes carbon.
Dependencies are inferred from the claim text.