Method of solving the unlanded phenomenon of the via etch
OwnerPei-Ren Jenginventor
Life of this patent
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Abstract
Dyed SOG is used as a rapid-etch material to minimize problems associated with unlanded via that are typically caused by via-mask misalignment. A thin barrier layer of anti-reflective coating (ARC) is disposed between the rapid-etch material and an underlying metal layer. The rapid-etch material, the ARC layer, and the metal layer are all etched back to yield multiple thin metal lines, and these metal lines are then blanketed with a HDP deposited layer. Subsequently, via holes are etched into both the HDP deposited layer and the rapid-etch material using an etchant which is more reactive with the rapid-etch material than the HDP deposited layer.
Claims22
A method comprising the following steps:
- providing a substrate with a conductive layer formed thereon;
- depositing a spin on glass (SOG) layer;
- defining a plurality of conductive lines in connection with a first etching step;
- depositing a dielectric layer;
- and
- defining at least one via hole in connection with a second etching step.
A method comprising the following steps:
- providing a substrate with a conductive layer formed thereon;
- depositing a rapid-etch dielectric layer;
- defining a plurality of conductive lines in association with a first etching step;
- depositing another dielectric layer;
- and
- defining at least one via hole in association with a second etching step in which the rapid-etch dielectric layer is etched at a higher rate than a rate at which the other dielectric layer is etched.
A structure, comprising:
- a plurality of conductive lines extending on covered portions of a substrate but not extending on uncovered portions of the substrate;
- a rapid-etch material positioned over regions of the plurality of conductive lines;
- a dielectric material disposed over at least parts of the covered portions and the uncovered portions;
- and
- a plurality of via holes etched into the dielectric material using an etchant, wherein an etch rate of the rapid-etch material for the etchant is greater than an etch rate of the dielectric material for the etchant.
A structure, comprising:
- a substrate;
- a plurality of conductive lines extending within corresponding first boundaries of the substrate but not extending within second boundaries of the substrate;
- a material covering at least portions of the conductive lines;
- and
- a plurality of via holes formed at least partially within the material and overlapping both the first boundaries and the second boundaries, wherein parts of the plurality of via holes overlapping the second boundaries do not extend in directions toward the substrate as far as parts of the plurality of via holes overlapping the first boundaries.
A structure, comprising:
- a substrate having at least one conductive line disposed thereon;
- a material covering at least part of the at least one conductive line;
- a rapid-etch layer disposed over a first portion of the at least one conductive line;
- and
- at least one via hole formed at least partially in the material over a second portion of the at least one conductive line;
- wherein the first portion of the at least one conductive line is not the same as the second portion of the at least one conductive line;
- and
- wherein the at least one via hole does not extend, in a direction toward the substrate, beneath an upper surface of the at least one conductive line.
Dependencies are inferred from the claim text.