Metal layer forming methods and capacitor electrode forming methods
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
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Abstract
A capacitor electrode forming method includes chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer including non-metal components from the precursor. The chemisorbed layer can be treated with an oxidant and the non-metal components removed to form a treated layer of metal. A capacitor electrode can be formed including the treated layer and, optionally, additional treated layers. Preferably, treating the layer does not substantially oxidize the metal and the treated layers exhibit the property of inhibiting oxygen diffusion. The chemisorbing and the treating can be performed at a temperature below about 450° C. or preferably below about 350° C.
Claims33
A capacitor electrode forming method comprising:
- chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the metal comprising platinum, iridium, ruthenium, osmium, palladium, or mixtures thereof;
- oxidizing components of the chemisorbed layer while not oxidizing the metal;
- and
- removing the oxidized components to form a metal layer consisting essentially of metal.
A capacitor electrode forming method comprising:
- chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer comprising non-metal components from the precursor;
- treating the chemisorbed layer with an oxidant effective to remove the nonmetal components to form a treated layer consisting essentially of metal;
- sufficiently repeating the chemisorbing, the treating, and the removing to form at least one additional treated layer consisting essentially of metal on the treated layer;
- and
- forming a capacitor electrode consisting of the treated layers.
A capacitor electrode forming method comprising:
- chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer comprising non-metal components from the precursor;
- treating the chemisorbed layer with an oxidant and removing the non-metal components to form a treated layer consisting essentially of metal, the metal comprising iridium, osmium, or mixtures thereof;
- sufficiently repeating the chemisorbing, the treating, and the removing to form at least one additional treated layer consisting essentially of metal on the treated layer;
- and
- forming a capacitor electrode comprising the treated layers.
A metal layer forming method comprising:
- chemisorbing a monolayer of at least one metal precursor on a substrate, the layer comprising organic components from the precursor;
- purging the at least one precursor from over the substrate;
- treating the chemisorbed monolayer with an oxidant and removing the organic components without substantially oxidizing the metal to form a treated monolayer consisting essentially of metal, the metal comprising iridium, osmium, or mixtures thereof;
- and
- performing both the chemisorbing and the treating at a temperature below about 450° C.
A metal layer forming method comprising:
- atomic layer depositing a layer on a substrate using precursor material comprising at least one of methylcyclopentadienyl platinum trimethyl ((CH3C5H4)Pt(CH3)3) and cyclooctadienyl platinum dimethyl ((C8H11)Pt(CH3)2), the layer comprising platinum and organic components from the precursor material;
- and
- treating the layer with an oxidant and removing the organic components to form a treated layer consisting essentially of platinum.
Dependencies are inferred from the claim text.