Thin-film magnetic head and method of forming the same
AssigneeAlps Electric Co., Ltd.
InventorKiyoshi Sato
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Abstract
In a thin-film magnetic head having a multilayered film developing a magnetoresistive effect, which is present between an upper shielding layer and a lower shielding layer both formed above an AlTiC substrate, a recess for defining the lower shielding layer is formed in an underlayer present on a surface of the AlTiC substrate, and a lower shielding layer made of NiFe is provided in the recess. A SiO2 film is interposed between the underlayer and the lower shielding layer.
Claims13
A thin-film magnetic head comprising a multilayered film developing a magnetoresistive effect, said multilayered film being present between an upper shielding layer and a lower shielding layer both formed above an AlTiC substrate,
- wherein a recess for defining said lower shielding layer is formed in an underlayer present on a surface of said AlTiC substrate, and a lower shielding layer made of a soft magnetic material is provided in said recess.
A method of forming a thin-film magnetic head, the method comprising the steps of:
- preparing an AlTiC substrate having an underlayer and forming, in said underlayer, a lower-shielding formed recess corresponding to an area in which a lower shielding layer is to be formed;
- forming a SiO2 film on a substrate surface and on said lower-shielding formed recess;
- forming a lower shielding layer made of a soft magnetic material on said SiO2 film;
- and
- polishing said lower shielding layer until said SiO2 film is exposed.
A method of forming a thin-film magnetic head, the method comprising the steps of:
- preparing an AlTiC substrate having an underlayer and forming a SiO2 film on said underlayer;
- forming, through said SiO2 film and partly in said underlayer, a lower-shielding formed recess corresponding to an area in which a lower shielding layer is to be formed;
- forming a lower shielding layer made of a soft magnetic material on a substrate surface and on said lower-shielding formed recess;
- and
- polishing said lower shielding layer until said SiO2 film is exposed.
Dependencies are inferred from the claim text.