Polishing cloth, polishing apparatus and method of manufacturing semiconductor devices
AssigneesKabushiki Kaisha Toshiba, Nof Corporation
InventorsHideaki Hirabayashi, Akiko Saito, Naoaki Sakurai, Yoshihiro Oshibe, Masahiro Ishidoya
Life of this patent
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Abstract
There is disclosed a polishing cloth having an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium and being capable of exhibiting a stable polishing performance for a relatively long period of time without necessitating a dressing treatment.
Claims26
A polishing cloth comprising an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium.
A polishing cloth comprising an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium and at least one abrasive grain selected from the group consisting of cerium oxide, manganese oxide, silica, alumina and zirconia, the abrasive grain being dispersed in the polymer material.
A polishing cloth comprising an abrasive layer containing a polymer material which is a soluble in an aqueous medium.
A polishing cloth comprising an abrasive layer containing a polymer material which is a soluble in an aqueous medium and at least one abrasive grain selected from the group consisting of cerium oxide, manganese oxide, silica, alumina and zirconia, the abrasive grain being dispersed in the polymer material.
A polishing cloth comprising an abrasive layer, a surface of which is prohibited from eluting in the presence of an aqueous medium, until the abrasive layer is subjected to frictional stress, and is permitted to elute in the presence of an aqueous medium, when the abrasive layer is subjected to frictional stress.
A polishing cloth comprising an abrasive layer having dispersed therein at least one abrasive grain selected from the group consisting of cerium oxide, manganese oxide, silica, alumina and zirconia, wherein a surface portion of the abrasive layer is prohibited from eluting in the presence of an aqueous medium, until the abrasive layer is subjected to frictional stress, and is permitted to elute in the presence of an aqueous medium, when the abrasive layer is subjected to frictional stress, concomitantly permitting the abrasive grain to be supplied to the surface of the abrasive layer.
A polishing apparatus comprising:
- a turntable having a surface which is covered with a polishing cloth having an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium;
- holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- feeding means for feeding a polishing slurry containing abrasive grains to the polishing cloth.
A polishing apparatus comprising:
- a turntable having a surface which is covered with a polishing cloth having an abrasive layer containing not only a polymer material which is a hydrolyzable with an aqueous medium but also at least one kind of abrasive grain selected from the group consisting of cerium oxide, manganese oxide, silica, alumina and zirconia, the abrasive grain being dispersed in the polymer material;
- holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- feeding means for feeding a polishing composition containing at least water and abrasive grain free to the polishing cloth.
A polishing apparatus comprising:
- a turntable having a surface which is covered with a polishing cloth having an abrasive layer containing a polymer material which is a soluble in an aqueous medium;
- holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- feeding means for feeding a polishing slurry containing abrasive grains to the polishing cloth.
A polishing apparatus comprising:
- a turntable having a surface which is covered with a polishing cloth having an abrasive layer containing a polymer material which is a soluble in an aqueous medium and at least one abrasive grain selected from the group consisting of cerium oxide, manganese oxide, silica, alumina and zirconia, the abrasive grain being dispersed in the polymer material;
- holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- feeding means for feeding a polishing composition containing at least water and abrasive grain free to the polishing cloth.
A polishing apparatus comprising:
- a turntable having a surface which is covered with a polishing cloth having an abrasive layer, a surface portion of which is permitted to elute in the presence of an aqueous medium, when the abrasive layer is subjected to frictional stress;
- holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- feeding means for feeding a polishing slurry containing abrasive grains to the polishing cloth.
A polishing apparatus comprising:
- a turntable having a surface which is covered with a polishing cloth having an abrasive layer having dispersed therein at least one abrasive grain selected from the group consisting of cerium oxide, manganese oxide, silica, alumina and zirconia, wherein a surface portion of the abrasive layer is permitted to elute in the presence of an aqueous medium, when the abrasive layer is subjected to frictional stress, concomitantly permitting the abrasive grain to be supplied to the surface of the abrasive layer;
- holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- feeding means for feeding a polishing composition containing at least water and abrasive grain free to the polishing cloth.
A method of manufacturing a semiconductor device, which comprises the steps of:
- providing a polishing apparatus comprising,
- (a) a turntable having a surface which is covered with a polishing cloth having an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium;
- (b) holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- (c) feeding means for feeding a polishing slurry containing abrasive grains to the polishing cloth,
- forming at least one embedding portion selected from a groove corresponding to a configuration of a wiring layer and an opening corresponding to a configuration of a via-fill in an insulating film deposited on a semiconductor substrate;
- forming a wiring material film made of copper or copper alloy on a surface of the insulating film including the inner surface of the embedding portion;
- and
- polishing the wiring material film by making use of the polishing apparatus, thereby forming at least one conductive member selected from a wiring layer and a via-fill in the embedding portion.
A method of manufacturing a semiconductor device, which comprises the steps of:
- providing a polishing apparatus comprising,
- (a) a turntable having a surface which is covered with a polishing cloth having an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium and at least one abrasive grain selected from the group consisting of cerium oxide, manganese oxide, silica, alumina and zirconia, the abrasive grain being dispersed in the polymer material;
- (b) holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- (c) feeding means for feeding a polishing composition containing at least water and abrasive grain free to the polishing cloth,
- forming at least one embedding portion selected from a groove corresponding to a configuration of a wiring layer and an opening corresponding to a configuration of a via-fill in an insulating film deposited on a semiconductor substrate;
- forming a wiring material film made of copper or copper alloy on a surface of the insulating film including the inner surface of the embedding portion;
- and
- polishing the wiring material film by making use of the polishing apparatus, thereby forming at least one conductive member selected from a wiring layer and a via-fill in the embedding portion.
A method of manufacturing a semiconductor device, which comprises the steps of:
- providing a polishing apparatus comprising,
- (a) a turntable having a surface which is covered with a polishing cloth having an abrasive layer containing a polymer material which is a soluble in an aqueous medium;
- (b) holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- (c) feeding means for feeding a polishing slurry containing abrasive grains to the polishing cloth,
- forming at least one embedding portion selected from a groove corresponding to a configuration of a wiring layer and an opening corresponding to a configuration of a via-fill in an insulating film deposited on a semiconductor substrate;
- forming a wiring material film made of copper or copper alloy on a surface of the insulating film including the inner surface of the embedding portion;
- and
- polishing the wiring material film by making use of the polishing apparatus, thereby forming at least one conductive member selected from a wiring layer and a via-fill in the embedding portion.
A method of manufacturing a semiconductor Ad device, which comprises the steps of:
- providing a polishing apparatus comprising,
- (a) a turntable having a surface which is covered with a polishing cloth having an abrasive layer containing a polymer material which is a soluble in an aqueous medium and at least one abrasive grain selected from the group consisting of cerium oxide, manganese oxide, silica, alumina and zirconia, the abrasive grain being dispersed in the polymer material;
- (b) holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- (c) feeding means for feeding a polishing composition containing at least water and abrasive grain free to the polishing cloth,
- forming at least one embedding portion selected from a groove corresponding to a configuration of a wiring layer and an opening corresponding to a configuration of a via-fill in an insulating film deposited on a semiconductor substrate;
- forming a wiring material film made of copper or copper alloy on a surface of the insulating film including the inner surface of the embedding portion;
- and
- polishing the wiring material film by making use of the polishing apparatus, thereby forming at least one conductive member selected from a wiring layer and a via-fill in the embedding portion.
A method of manufacturing a semiconductor device, which comprises the steps of:
- providing a polishing apparatus comprising,
- (a) a turntable having a surface which is covered with a polishing cloth having an abrasive layer, a surface portion of which is permitted to elute in the presence of an aqueous medium, when the abrasive layer is subjected to frictional stress;
- (b) holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- (c) feeding means for feeding a polishing slurry containing abrasive grains to the polishing cloth,
- forming at least one embedding portion selected from a groove corresponding to a configuration of a wiring layer and an opening corresponding to a configuration of a via-fill in an insulating film deposited on a semiconductor substrate;
- forming a wiring material film made of copper or copper alloy on a surface of the insulating film including the inner surface of the embedding portion;
- and
- polishing the wiring material film by making use of the polishing apparatus, thereby forming at least one conductive member selected from a wiring layer and a via-fill in the embedding portion.
A method of manufacturing a semiconductor device, which comprises the steps of:
- providing a polishing apparatus comprising,
- (a) a turntable having a surface which is covered with a polishing cloth including an abrasive layer having dispersed therein at least one abrasive grain selected from the group consisting of cerium oxide, manganese oxide, silica, alumina and zirconia, wherein a surface portion of the abrasive layer is permitted to elute in the presence of an aqueous medium, when the abrasive layer is subjected to frictional stress, concomitantly permitting the abrasive grain to be supplied to the surface of the abrasive layer;
- (b) holding means which is rotatively and vertically movably disposed over the turntable and is designed to hold a subject member to be polished, the holding means being also designed to impose a desired magnitude of load on the subject member to thereby enable the subject member to be press-contacted with the abrasive cloth of the turntable, and further designed to rotate in the same direction as that of the turntable;
- and
- (c) feeding means for feeding a polishing composition containing at least water and abrasive grain free to the polishing cloth,
- forming at least one embedding portion selected from a groove corresponding to a configuration of a wiring layer and an opening corresponding to a configuration of a via-fill in an insulating film deposited on a semiconductor substrate;
- forming a wiring material film made of copper or copper alloy on a surface of the insulating film including the inner surface of the embedding portion;
- and
- polishing the wiring material film by making use of the polishing apparatus, thereby forming at least one conductive member selected from a wiring layer and a via-fill in the embedding portion.
Dependencies are inferred from the claim text.