Local dry etching method
AssigneeSpeedfam Corporation
InventorsMichihiko Yanagisawa, Kazuyuki Tsuruoka
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Abstract
In a local dry etching method, position-thickness data of a semiconductor wafer is previously obtained by measuring the wafer surface, components of position-thickness data shorter than a predetermined spatial wavelength are cut off by filtering and nozzle-wafer relative speed for planarizing the surface is calculated using the filtered data.
Claims5
A local dry etching method for planarizing a surface of a semiconductor wafer in which a nozzle injecting an activated species gas is moved relatively to said wafer along said surface in a nozzle-wafer relative speed obtained by calculation using position-thickness data of said wafer and an amount of material to be removed for planarizing at each position,
- wherein components of said data shorter than a predetermined spatial wavelength are cut off by filtering.
Dependencies are inferred from the claim text.