Semiconductor integrated circuit device and method for making the same

A method of fabricating a semiconductor integrated circuit device, comprising the steps of:

• forming a first conductive film over a first insulating film, having a surface, over a semiconductor substrate and in through-holes in the first insulating film, the first conductive film having such a thickness that the through-holes are filled with said first conductive film;
• removing said first conductive film over said first insulating film so as to leave said first conductive film individually in the through-holes, selectively;
• forming an aluminum film over said first insulating film and over said first conductive film in said through-holes,
• wherein said forming the aluminum film comprises:
• a first step of depositing a first aluminum film by sputtering under conditions that said semiconductor substrate is kept at a first temperature and said first aluminum film is deposited at a first deposition rate, and
• a second step of depositing a second aluminum film by sputtering on said first aluminum film under conditions that said semiconductor substrate is kept at a second temperature higher than said first temperature and said second aluminum film is deposited at a second deposition rate lower than said first deposition rate;
• patterning the aluminum film to form a pattern of the aluminum film over said first conductive film in the through-holes;
• forming a second insulating film covering said pattern and said first insulating film and having through-holes;
• forming a second conductive film over said second insulating film and in the through-holes in the second insulating film;
• removing said second conductive film over said second insulating film so as to leave said second conductive film individually in the through-holes, selectively;
• forming another aluminum film over said second insulating film and over said second conductive film in said through-holes,
• wherein said forming the another aluminum film comprises:
• a first step of depositing a third aluminum film by sputtering under conditions that said semiconductor substrate is kept at a third temperature and said third aluminum film is deposited at a third deposition rate, and
• a second step of depositing a fourth aluminum film by sputtering on said third aluminum film under conditions that said semiconductor substrate is kept at a fourth temperature higher than said third temperature and said fourth aluminum film is deposited at a fourth deposition rate lower than said third deposition rate;
• and
• patterning said another aluminum film to form a pattern of said another aluminum film over said second conductive film in through-holes of the second insulating film positioned over said first conductive film in the through-holes of the first insulating film.