Back to results
US 2003/0199156 A1Published application
Manufacturing method of semiconductor device
AssigneeRenesas Technology Corp.
InventorYuji Fujii
Life of this patent
Estimating the term…
Abstract
After deposition of a conductor film made of titanium tungsten over a main surface of a semiconductor substrate formed with grooves, a conductor film made of aluminium is further deposited. Subsequently, the conductor film is made to reflow and run into the grooves. Thereafter, while heating, conductor films are respectively deposited, thereby causing the conductor films to run into the grooves. The provision of the conductor film suppresses or prevents aluminium in the conductor films and silicon in the semiconductor substrate from reacting with each other upon reflowing of the conductor films.
Claims35
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) forming an opening for wiring over a main surface of a semiconductor substrate in such a way that part of said semiconductor substrate is exposed;
- (b) depositing a first conductor film over the main surface of said semiconductor substrate including said opening for wiring;
- (c) depositing an aluminium-based conductor film over said first conductor film including said opening for wiring;
- and
- (d) after the step (c), heating said aluminium-based conductor film to cause said conductor film to flow and run into said opening for wiring,
- wherein said first conductor film has a structure capable of suppressing or preventing, in the step (d), the reaction between aluminium atom in said aluminium-based conductor film and constituent atom in said semiconductor substrate.
3 more elements
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) forming an opening for wiring over a main surface of a semiconductor substrate in such a way that part of said semiconductor substrate is exposed;
- (b) depositing a first conductor film over the main surface of said semiconductor substrate including said opening for wiring
- (c) depositing a first aluminium-based conductor film mainly made of aluminium over said first conductor film including said opening for wiring;
- and
- (d) further depositing a second aluminium-based conductor film over said first aluminium-based conductor film including said opening for wiring while heating, so that said first and second aluminium-based conductor films are made to flow and run into said opening for wiring,
- wherein said first conductor film has a structure capable of suppressing or preventing, in the step (d), the reaction between an aluminium atom in said first and second aluminium-based conductor films and a constituent atom in said semiconductor substrate.
3 more elements
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) forming an opening for wiring over a main surface of a semiconductor substrate in such a way that part of said semiconductor substrate is exposed;
- (b) depositing a first conductor film over the main surface of said semiconductor substrate including said opening for wiring
- (c) depositing a first aluminium-based conductor film over said first conductor film including said opening for wiring;
- (d) heating said first aluminium-based conductor film after the step (c) so that said first aluminium-based conductor film is caused to flow and run into said opening for wiring;
- and
- (e) depositing, after the step (d), a second aluminium-based conductor film over said first aluminium-based conductor film including said opening for wiring while heating, to cause the first and second aluminium-based conductor films to flow and run into said opening for wiring,
- wherein said first conductor film has a structure capable of suppressing or preventing, in the steps (d) and (e), the reaction between an aluminium atom and a constituent atom in said semiconductor substrate.
4 more elements
A manufacturing method of a semiconductor device having a power transistor, comprising the steps of:
- (a) forming a first semiconductor region of a first conductivity type in a semiconductor substrate;
- (b) forming a second semiconductor region of a second conductivity type opposite to said first conductivity type as an upper layer relative to said first semiconductor region of said semiconductor substrate;
- (c) forming a gate insulating film on said semiconductor substrate;
- (d) forming a gate electrode on said gate insulating film;
- (e) forming a first insulating film on said gate electrode;
- (f) forming a second insulating film at side surfaces of said gate electrode;
- (g) etching part of said semiconductor substrate exposed from said first and second insulating films thereby forming a groove passing through said second semiconductor region to reach said first semiconductor region;
- (h) forming a third semiconductor region of said first conductivity type at a bottom of said groove;
- (i) depositing a first conductor film over the main surface of said semiconductor substrate including an inside of said groove;
- (j) depositing an aluminium-based conductor film on said first conductor film including the inside of said groove;
- and
- (k) after the step (j), heating said aluminium-based conductor film to cause said aluminium-based conductor film to flow and run into said groove,
- wherein said first conductor film has a structure capable of suppressing or preventing, in the step (k), the reaction between aluminium atom in said aluminium-based conductor film and constituent atom in said semiconductor substrate.
10 more elements
A manufacturing method of a semiconductor device having a power transistor, comprising the steps of:
- (a) forming a first semiconductor region of a first conductivity type in a semiconductor substrate;
- (b) forming a second semiconductor region of a second conductivity type opposite to said first conductivity type as an upper layer relative to said first semiconductor region of said semiconductor substrate;
- (c) forming a gate insulating film over said semiconductor substrate;
- (d) forming a gate electrode on said gate insulating film;
- (e) forming a first insulating film on said gate electrode;
- (f) forming a second insulating film at side surfaces of said gate electrode;
- (g) etching part of said semiconductor substrate exposed from said first and second insulating films thereby forming a groove passing through said second semiconductor region to reach said first semiconductor region;
- (h) forming a third semiconductor region of said first conductivity type at a bottom of said groove;
- (i) depositing a first conductor film over the main surface of said semiconductor substrate including an inside of said groove;
- (j) depositing a first aluminium-based conductor film over said first conductor film including the inside of said groove;
- and
- (k) depositing a second aluminium-based conductor film over said first aluminium-based conductor film including the inside of said groove while heating, thereby causing said first and second aluminium-based conductor films to run into said groove,
- wherein said first conductor film has a structure capable of suppressing or preventing, in the step (k), the reaction between aluminium atom in said first and second aluminium-based conductor films and a constituent atom in said semiconductor substrate.
10 more elements
A manufacturing method of a semiconductor device having a power transistor, comprising the steps of:
- (a) forming a first semiconductor region of a first conductivity type in a semiconductor substrate;
- (b) forming a second semiconductor region of a second conductivity type opposite to said first conductivity type as an upper layer relative to said first semiconductor region of said semiconductor substrate;
- (c) forming a gate insulating film over said semiconductor substrate;
- (d) forming a gate electrode over said gate insulating film;
- (e) forming a first insulating film over said gate electrode;
- (f) forming a second insulating film at side surfaces of said gate electrode;
- (g) etching part of said semiconductor substrate exposed from said first and second insulating films thereby forming a groove passing through said second semiconductor region to reach said first semiconductor region;
- (h) forming a third semiconductor region of said first conductivity type at a bottom of said groove;
- (i) depositing a first conductor film over the main surface of said semiconductor substrate including an inside of said groove;
- (j) depositing a first aluminium-based conductor film over said first conductor film including the inside of said groove;
- (k) heating, after the step (j), said first aluminium-based conductor film, thereby causing said first aluminium-based conductor film to flow and run into said groove;
- and
- (l) depositing, after the step (k), a second aluminium-based conductor film over said first aluminium-based conductor film including the inside of said groove while heating, thereby causing said first and second aluminium-based conductor films to run into said groove,
- wherein said first conductor film has a structure capable of suppressing or preventing, in the steps (k) and (l), the reaction between aluminium atom and constituent atom in said semiconductor substrate.
11 more elements
A manufacturing method of a semiconductor device having a power transistor, comprising the steps of:
- (a) forming, in a semiconductor substrate, a first semiconductor region of a first conductivity type where a channel region of said power transistor is to be formed;
- (b) forming a second semiconductor region of a second conductivity type, which is opposite to said first conductivity type and serves as a source region of said power transistor, as an upper layer relative to said first semiconductor region of said semiconductor substrate;
- (c) forming, in said semiconductor substrate, a first groove reaching a position deeper than said first semiconductor region;
- (d) forming a gate insulating film over a main surface of said semiconductor substrate including an inside of said first groove;
- (e) forming a gate electrode over said gate insulating film including the inside of said first groove;
- (f) forming a first insulating film over said gate electrode;
- (g) forming a second insulating film at side surfaces of said gate electrode;
- (h) etching part of said semiconductor substrate exposed from said first and second insulating films thereby forming a second groove passing through said second semiconductor region to reach said first semiconductor region;
- (i) forming a third semiconductor region of said first conductivity type at a bottom of said second groove;
- (j) depositing a first conductor film over the main surface of said semiconductor substrate including an inside of said second groove;
- (k) depositing a first aluminium-based conductor film over said first conductor film including the inside of said second groove;
- (l) heating, after the step (k), said first aluminium-based conductor film, thereby causing said aluminium-based conductor film to flow and run into said second groove;
- and
- (m) patterning said conductor film and said aluminium-based conductor film to form a gate electrode and a source electrode of said power transistor,
- wherein said first conductor film has a structure capable of suppressing or preventing, in the step (l), the reaction between aluminium atom in said aluminium-based conductor film and constituent atom in said semiconductor substrate.
12 more elements
A manufacturing method of a semiconductor device having a power transistor, comprising the steps of:
- (a) forming, in a semiconductor substrate, a first semiconductor region of a first conductivity type where a channel region of said power transistor is to be formed;
- (b) forming a second semiconductor region of a second conductivity type, which is opposite to said first conductivity type and serves as a source region of said power transistor, as an upper layer relative to said first semiconductor region of said semiconductor substrate;
- (c) forming, in said semiconductor substrate, a first groove reaching a position deeper than said first semiconductor region;
- (d) forming a gate insulating film over a main surface of said semiconductor substrate including an inside of said first groove;
- (e) forming a gate electrode over said gate insulating film including the inside of said first groove;
- (f) forming a first insulating film over said gate electrode;
- (g) forming a second insulating film at side surfaces of said gate electrode;
- (h) etching part of said semiconductor substrate exposed from said first and second insulating films thereby forming a second groove passing through said second semiconductor region to reach said first semiconductor region;
- (i) forming a third semiconductor region of said first conductivity type at a bottom of said second groove;
- (j) depositing a first conductor film over the main surface of said semiconductor substrate including an inside of said second groove;
- (k) depositing a first aluminium-based conductor film over said first conductor film including the inside of said second groove;
- (l) depositing a second aluminium-based conductor film over said first aluminium-based conductor film including the inside of said second groove while heating thereby causing said first and second aluminium-based conductor films to run into said second groove;
- and
- (m) patterning said first conductor film and said first and second aluminium-based conductor films to form a gate electrode and a source electrode of said power transistor,
- wherein said first conductor film has a structure capable of suppressing or preventing, in the step (l), the reaction between aluminium atom in said first and second aluminium-based conductor films and constituent atom in said semiconductor substrate.
12 more elements
A manufacturing method of a semiconductor device having a power transistor, comprising the steps of:
- (a) forming, in a semiconductor substrate, a first semiconductor region of a first conductivity type where a channel region of said power transistor is to be formed;
- (b) forming a second semiconductor region of a second conductivity type, which is opposite to said first conductivity type and serves as a source region of said power transistor, as an upper layer relative to said first semiconductor region of said semiconductor substrate;
- (c) forming, in said semiconductor substrate, a first groove reaching a position deeper than said first semiconductor region;
- (d) forming a gate insulating film over a main surface of said semiconductor substrate including an inside of said first groove;
- (e) forming a gate electrode over said gate insulating film including the inside of said first groove;
- (f) forming a first insulating film over said gate electrode;
- (g) forming a second insulating film at side surfaces of said gate electrode;
- (h) etching part of said semiconductor substrate exposed from said first and second insulating films thereby forming a second groove passing through said second semiconductor region to reach said first semiconductor region;
- (i) forming a third semiconductor region of said first conductivity type at a bottom of said second groove;
- (j) depositing a first conductor film over the main surface of said semiconductor substrate including an inside of said second groove;
- (k) depositing a first aluminium-based conductor film over said first conductor film including the inside of said second groove;
- (l) heating, after the step (k), said first aluminium-based conductor film thereby causing said first aluminium-based conductor film to run into the inside of said second groove;
- (m) depositing, after the step (l), a second aluminium-based conductor film over said first aluminium-based conductor film including the inside of said second groove while heating thereby causing said first and second aluminium-based conductor films to flow and run into said second groove;
- and
- (n) patterning said first conductor film and said first and second aluminium-based conductor films to form a gate electrode and a source electrode of said power transistor,
- wherein said first conductor film has a structure capable of suppressing or preventing, in the steps (l) and (m), the reaction between aluminium atom and constituent atom in said semiconductor substrate.
13 more elements
Dependencies are inferred from the claim text.