Method of producing SI-GE base semiconductor devices

Abstract

Disclosed is a method of producing elementary semiconductor devices such as a field-effect transistor, a capacitor, a resistor, an inductor, a transformer, or a diode, and devices produced by said method. According to the method, a semiconductor seed layer is applied to a substrate having regions of exposed semiconductor material and regions of exposed dielectric material. The method comprises a step of disposing the substrate in a growth chamber and nucleating the seed layer by exposing the semiconductor material and dielectric material to an atmosphere of gases presented at a predetermined flow rate, temperature and pressure selected to provide contiguous growth of the seed layer, the seed layer growing in a single crystal lattice over predetermined windows within the mixed topology substrate.

Dependencies are inferred from the claim text.