Shallow trench isolation method and method for manufacturing non-volatile memory device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSeong-Soo Lee, Jae-Seung Hwang
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Abstract
In a method for shallow trench isolation and a method for manufacturing a non-volatile memory device using the same, a hard mask layer pattern, a stopper layer pattern and an oxide film pattern are formed by patterning a hard mask layer, a stopper layer and an oxide film. A trench is formed by etching an upper portion of a substrate adjacent to the stopper layer pattern with the hard mask layer pattern. After removing the hard mask layer, a field oxide layer is formed in the trench. After etching the trench with the hard mask, the aspect ratio of the trench region is reduced by removing the hard mask prior to filling the trench, enhancing the gap filling margin of the trench fill process.
Claims14
A shallow trench isolation method comprising the steps of:
- (a) forming an oxide film on a semiconductor substrate;
- (b) forming a stopper layer on the oxide film;
- (c) forming a hard mask layer on the stopper layer;
- (d) forming a hard mask layer pattern, a stopper layer pattern and an oxide film pattern by patterning the hard mask layer, the stopper layer and the oxide film;
- (e) forming a trench by etching an upper portion of the substrate using the hard mask layer pattern;
- (f) removing the hard mask layer;
- and
- (g) forming a field oxide film in the trench.
A method for manufacturing a non-volatile memory device, comprising the steps of:
- (a) forming an oxide film as a gate oxide film on a semiconductor substrate;
- (b) forming a first conductive layer for a floating gate on the oxide film;
- (c) forming a stopper layer on the first conducing layer;
- (d) forming a hard mask layer on the stopper layer;
- (e) forming a hard mask layer pattern and a stopper layer pattern by patterning the hard mask layer and the stopper layer;
- (f) forming a first floating gate pattern and a gate oxide film by etching the first conductive layer and the oxide layer using the hard mask layer pattern;
- (f) defining an active region of the substrate by etching the substrate using the hard mask layer pattern to form a trench aligned to the first floating gate pattern;
- (g) removing the hard mask layer pattern;
- (h) forming a field oxide film in the trench;
- and
- (i) forming a dielectric film and a control gate layer sequentially on the first floating gate pattern.
Dependencies are inferred from the claim text.