Capacitor in semiconductor device having dual dielectric film structure and method for fabricating the same

Abstract

A capacitor for a semiconductor device having a dual dielectric film structure and a fabrication method therefor. The method for fabricating the capacitor comprises the steps of: forming a lower electrode on a semiconductor substrate, forming a dielectric film of a dual dielectric film structure composed of an Al2O3 thin film and a Ta2O5 thin film on the lower electrode, and forming an upper electrode on the dielectric film. Meanwhile, the capacitor in the semiconductor device comprises: a lower electrode formed on a semiconductor substrate, a dielectric film of a dual dielectric film structure composed of a Al2O3 thin film and a Ta2O5 thin film, the dielectric film being formed on the lower electrode, and an upper electrode formed on the dielectric film.

Dependencies are inferred from the claim text.