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US 2003/0199135 A1Published application
Method of forming a capacitor dielectric structure
AssigneeProMOS Technologies Inc.
InventorsYueh-Chuan Lee, Shih-Lung Chen, Jin-Shing Huang, Wen-Sheng Lee
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Abstract
A method of forming capacitor dielectric structure, comprising steps of providing a semiconductor substrate having at least a predetermined capacitor structure, using silicon nitride deposition to form a SiN layer on the predetermined capacitor structure, using a reoxidation process to grow an oxide layer on the SiN layer, and using a nitridation process to form a nitridation layer on the oxide layer.
Claims15
A method of forming capacitor dielectric structure, comprising steps of:
- providing a semiconductor substrate having at least a predetermined capacitor structure;
- using silicon nitride deposition to form a SiN layer on the predetermined capacitor structure;
- using a reoxidation process to grow an oxide layer on the SiN layer;
- and
- using a nitridation process to form a nitridation layer on the oxide layer.
2 more elements
A method of forming capacitor dielectric structure, comprising steps of:
- providing a semiconductor substrate having at least a deep trench;
- using silicon nitride deposition to form a SiN layer on the sidewall and bottom of the deep trench;
- using a reoxidation process to grow an oxide layer on the SiN layer;
- and
- using a nitridation process to form a nitridation layer on the oxide layer.
2 more elements
Dependencies are inferred from the claim text.