Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen
AssigneeInternational Business Machines Corporation
InventorsJack O. Chu, Feng-Yi Huang, Steven J. Koester, Devendra K. Sadana
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Abstract
A method of fabricating high-quality, substantially relaxed SiGe-on-insulator substrate is provided by implanting oxygen into a Si/SiGe multilayer heterostructure which comprises alternating Si and SiGe layers. Specifically, the high quality, relaxed SiGe-on-insulator is formed by implanting oxygen ions into a multilayer heterostructure which includes alternating layers of Si and SiGe. Following, the implanting step, the multilayer heterostructure containing implanted oxygen ions is annealed, i.e., heated, so as to form a buried oxide region predominately within one of the Si layers of the multilayer structure.
Claims31
A method of fabricating a relaxed SiGe-on-insulator substrate comprising the steps of:
- implanting oxygen ions into a multilayer heterostructure comprising alternating layers of Si and SiGe, wherein said multilayer heterostructure has an uppermost layer of SiGe;
- and
- annealing said multilayer heterostructure containing implanted oxygen ions to form a buried oxide region predominately within one of the Si layers of the multilayer heterostructure.
The method of claim I wherein a Si capping layer is formed on said heterostructure and a patterned dielectric mask is formed on said Si capping layer prior to performing step (a).
Dependencies are inferred from the claim text.