Back to results
US 2003/0199113 A1Published application
Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption
AssigneeCalifornia Institute of Technology
InventorsSarath D. Gunapala, Sumith V. Bandara, John K. Liu
Life of this patent
Estimating the term…
Abstract
Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.
Claims9
A method for fabricating a quantum-well sensing array, comprising:
- fabricating quantum-well layers over a substrate;
- forming a patterned PMMA layer over the quantum-well layers;
- performing reactive ion etching to the quantum-well layers through the patterned PMMA layer to form an array of pyramid-shaped voids in the quantum-well layers with boundary planes differ from semiconductor crystallographic planes;
- and
- filling the pyramid-shaped voids with a non-radiation-sensing insulator material.
2 more elements
A method, comprising accepting incident radiation passing along an axis which is substantially perpendicular to an axis of a chip holding a radiation sensitive elements;
- reflecting said incident radiation along a reflected radiation axis which is substantially parallel with an axis of said radiation sensitive element, and detecting said radiation along said axis of said radiation sensitive element.
A method, comprising:
- forming a plurality of reflectors with at least a number of different reflecting wavelengths, such that at least some of said reflectors are sensitive to and preferentially reflect wavelengths of light which are different than those reflected by others of said reflectors;
- forming a plurality of radiation sensitive elements, which are sensitive two different wavelengths of radiation;
- using said plurality of reflectors to reflect incident radiation to a direction along an axis that is substantially perpendicular to an axis of the chip holding said plurality of radiation sensitive elements.
Dependencies are inferred from the claim text.