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AssigneeInternational Business Machines Corporation
InventorsDirk Pfeiffer, Marie Angelopoulos, Katherina Babich, Phillip Brock, Wu-Song Huang, Arpan P. Mahorowala, David R. Medeiros, Ratnam Sooriyakumaran
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Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
A composition suitable for formation of a spin-on antireflective hardmask layer, said composition comprising:
A method of forming a patterned material feature on a substrate, said method comprising:
A patterned lithographic structure on a substrate, said lithographic structure comprising a patterned resist layer over a patterned hardmask layer, said hardmask layer comprising a crosslinked SiO-containing polymer having chromophore moieties and transparent moieties.
Dependencies are inferred from the claim text.