Reflection photomasks with a capping layer and methods for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorByoung-Taek Lee
Life of this patent
Estimating the term…
Abstract
A reflection photomask includes a reflection layer on a substrate, an absorber pattern on the reflection layer, and a capping layer on the reflection layer. The capping layer may be selected to decrease a reflectivity of the reflection photomask by less than about 20% of the reflectivity of the reflection layer.
Claims49
A reflection photomask having an associated reflectivity to extreme ultra violet (EUV) radiation, the reflection photomask comprising:
- a substrate;
- a reflection layer on the substrate, the reflection layer comprising a material that has an associated reflectivity to EUV radiation;
- an absorber pattern on the reflection layer, the absorber pattern comprising a material that absorbs EUV radiation;
- and
- a capping layer on the reflection layer, wherein the capping layer is selected to change the reflectivity of the reflection photomask by less than about 20% of the reflectivity of the reflection layer.
A reflection photomask comprising:
- a substrate;
- a reflection layer on the substrate, the reflection layer comprising a material that is reflective to extreme ultra violet (EUV) radiation;
- an absorber pattern on the reflection layer, the absorber pattern comprising a material that absorbs EUV radiation;
- and
- a capping layer on the reflection layer.
A method for manufacturing a reflection photomask having an associated reflectivity to extreme ultra violet (EUV) radiation, the method comprising:
- forming a reflection layer on a substrate, the reflection layer comprising a material that has a reflectivity to EUV radiation;
- forming an absorber pattern on the reflection layer, the absorber pattern comprising a material that absorbs EUV radiation;
- and
- forming a capping layer on the reflection layer, wherein the capping layer is selected to change the reflectivity of the reflection photomask by less than about 20% of the reflectivity of the reflection layer.
A method for manufacturing a reflection photomask, the method comprising:
- forming a reflection layer on a substrate, the reflection layer comprising a material that is reflective to extreme ultra violet (EUV) radiation;
- forming an absorber pattern on the reflection layer, the absorber pattern comprising a material that absorbs EUV radiation;
- and
- forming a capping layer on the reflection layer.
Dependencies are inferred from the claim text.