Application of carbon doped silicon oxide film to flat panel industry
AssigneeApplied Materials, Inc.
InventorsTae Kyung Won, Quanyuan Shang, William R. Harshbarger
Life of this patent
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Abstract
A process for depositing a low dielectric constant layer (k<3) on a flat panel display and a flat panel display. The process includes reacting one or more organosilicon compounds with an oxygen containing compound at an RF power level from about 0.345 W/cm2 to about 1.265 W/cm2. The flat panel display includes a plasma display panel having a first substrate, a plurality of barriers deposited on the first substrate, a second substrate, a low dielectric constant layer (k<3) deposited on the second substrate, and a plurality of ground electrodes formed between the barriers and the dielectric layer.
Claims42
A process for depositing a low dielectric constant layer (k<3) on a flat panel display, comprising reacting one or more organosilicon compounds with an oxygen containing compound at an RF power level from about 0.345 W/cm2 to about 1.265 W/cm2.
A process for depositing a low dielectric constant film on a flat panel display substrate, comprising:
- depositing a low dielectric constant layer (k<3) on a patterned metal layer within a flat panel display from process gases comprising one or more organosilicon compounds and an oxygen containing compound at an RF power level from about 0.345 W/cm2 to about 1.265 W/cm2.
A plasma display panel, comprising:
- a first substrate;
- a plurality of barriers deposited on the first substrate;
- a second substrate;
- a low dielectric constant layer (k<3) deposited on the second substrate;
- and
- a plurality of ground electrodes formed between the barriers and the low dielectric constant layer;
- wherein the low dielectric constant layer is formed by reacting one or more organosilicon compounds with an oxygen containing compound at an RF power level from about 0.345 W/cm2 to about 1.265 W/cm2.
A flat panel display, comprising:
- a lower substrate including a display area having pixel electrodes, thin film transistors, and driving circuits;
- and
- an upper substrate facing the lower substrate and having a common electrode;
- wherein the thin film transistors comprise a low dielectric constant layer (k<3) deposited by reacting one or more organosilicon compounds with an oxygen containing compound at a constant RF power level from about 0.345 W/cm2 to about 1.265 W/cm2.
Dependencies are inferred from the claim text.