Refilling method by ion beam, instrument for fabrication and observation by ion beam, and manufacturing method of electron device

A method of filling a hole by using an ion beam, comprising:

• a step of processing a part of a sample surface with an ion beam;
• and
• a step of irradiating a hole formed in said sample face by said processing to form an ion beam gas-assisted deposition layer,
• wherein said ion beam gas-assisted deposition layer is formed by setting a range of an area scanned with said ion beam to be almost the same as an opening area of the hole in said sample face and controlling said scanning area so as to move with respect to the position of said hole.

A method of filling a hole by using an ion beam, comprising:

• a step of processing a part of a sample surface with an ion beam;
• and
• a step of irradiating a hole formed in said sample face by said processing with said ion beam to form an ion beam gas-assisted deposition layer,
• wherein said ion beam gas-assisted deposition layer is formed in said hole while controlling so that a part of a side wall of said hole is irradiated with said ion beam and another part is not irradiated in an area scanned with said ion beam and controlling so as to continuously reduce said area scanned with lapse of time of filling the hole.