Method for low-temperature organic chemical vapor deposition of tungsten nitride, tungsten nitride films and tungsten nitride diffusion barriers for computer interconnect metallization

Abstract

Processes for producing tungsten nitride and tungsten nitride films are provided in which a tungsten carbonyl compound and a nitrogen-containing reactant gas are reacted at a temperature below about 600° C. Tungsten nitride precursors are also included which comprise a tungsten carbonyl compound capable of forming a tungsten nitride film in the presence of a nitrogen-containing reactant gas at a temperature of less than about 600° C. A process for forming a film by atomic layer deposition is also provided which includes introducing into a substrate having a surface into a deposition chamber and heating the substrate to a temperature sufficient to allow adsorption of a tungsten source precursor or an intermediate of a tungsten source precursor, introducing a tungsten source precursor into the deposition chamber by pulsing for a period of time sufficient to form a self-limiting monolayer of the source precursor or an intermediate of the tungsten source precursor intermediate, introducing an inert gas into the deposition chamber by pulsing the inert gas to purge the deposition to remove the tungsten nitride precursor in the gas phase, introducing a nitrogen-containing gas into the deposition chamber by pulsing to react with the adsorbed precursor monolayer on the substrate surface and to form a first tungsten nitride atomic layer on the substrate surface. An inert gas may then introduced into the deposition chamber for a period of time sufficient to remove the unreacted nitrogen-containing gas and reaction byproducts from the deposition chamber. The entire pulsing sequence including precursor, inert gas, nitrogen-containing gas may be repeated until a film with a desired thickness is achieved.

Dependencies are inferred from the claim text.